Low Dark Current InGaAs(P)/InP p–i–n Photodiodes

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概要

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• Planar InGaAs(P)/InP p–i–n photodiodes have been successfully fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). High-quality and uniform epitaxial layers are obtained. It is noted that the InGaAs layer background concentration is as low as $4.5 \times 10^{13}$ cm-3. The dark current is significantly reduced by using a wider-band-gap material of quaternary InxGa1-xAsyP1-y as a cap layer to reduce the device surface leakage current. In addition, the device becomes highly photosensitive due to the reduction of the absorption of the radiation in the narrow-band-gap InxGa1-xAsyP1-y cap layer. The p–i–n photodiode with a wide-band-gap InP cap layer exhibits a dark current as low as 60 pA at $-10$ V bias, corresponding to a dark current density of $4.2\times 10^{-7}$ A/cm2.

• 2003-07-15

著者

• CHEN Yen-Wei

  Institute of Laser Engineering, Osaka University

• Chen Yeong-jia

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• HSU Rong-Tay

  South Epitaxy Corporation

• WU Yue-Huei

  South Epitaxy Corporation

• Hsu Wei-chou

  Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn

• Hsu Rong-Tay

  South Epitaxy Corporation, No. 16 Da-Shun 9th Road, Tainan Science-Based Industrial Park, Hsin-Shi, Tainan County, Taiwan 744, R.O.C.

• Wu Yue-Huei

  South Epitaxy Corporation, No. 16 Da-Shun 9th Road, Tainan Science-Based Industrial Park, Hsin-Shi, Tainan County, Taiwan 744, R.O.C.

• Chen Yeong-Jia

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.

• Chen Yen-Wei

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.

• CHEN Yen-Wei

  Institute for Laser Technology

関連論文

• Observation of Burn and Pusher Regions of Laser-Driven Large-High-Aspect-Ratio Target by α-Particle Imaging
• Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
• Analysis of Laser Beam Propagation Effects in Atomic Laser Isotope Separation
• Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor
• Low Dark Current InGaAs(P)/InP p-i-n Photodiodes
• An Improved In_Al_As_Sb_/InP Heterostructure Utilizing Coupled δ-Doping InP Channel : Semiconductors
• Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In_Ga_As_N_(Sb) Dilute Channel
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• Novel In_Al_As/In_xGa_As Metamorphic δ-HEMT's on GaAs Substrate with Various Channel Designs
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