Investigations of $\delta$-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded InxGa1-xAs Channel

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概要

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• Comprehensive investigations of the various static and microwave performances of InAlAs/InGaAs/InP high-electron-mobility transistor (HEMT) with a linearly graded InxGa1-xAs channel (LGC-HEMT) have been conducted. LGC-HEEMT was compared with the same HEMT having a conventional lattice-matched In0.53Ga0.47As channel (LM-HEMT). Improved carrier transport characteristics and confinement capability achieved by employing a linearly graded channel have contributed to a high extrinsic transconductance ($g_{\text{m}}$) of 319 mS/mm, a high unity-gain cutoff frequency ($ f_{\text{t}}$) of 37 GHz, and a maximum oscillation frequency ($ f_{\text{max}}$) of 51 GHz at 300 K for a gate length of 0.65 μm. The improved gate-voltage swing, turn-on and output power characteristics of LGC-HEMT have also been discussed.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-12-15

著者

• Chen Hsin-hung

  Department Of Electronic Engineering Feng Chia University

• Huang Dong-hai

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Chen Yeong-jia

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Huang Jun-chin

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Hsu Wei-chou

  Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn

• Lee Ching-sung

  Department Of Electrical Engineering National Cheng Kung University

• Huang Jun-Chin

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1, University Road, Tainan, Taiwan, Republic of China

• Hsu Wei-Chou

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1, University Road, Tainan, Taiwan, Republic of China

• Chen Hsin-Hung

  Department of Electronic Engineering, Feng Chia University, 100 Wenhwa Road, Taichung, Taiwan 40724, Republic of China

• Huang Dong-Hai

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1, University Road, Tainan, Taiwan, Republic of China

• Chen Yeong-Jia

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1, University Road, Tainan, Taiwan, Republic of China

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