Effect of Annealing on Low-Threshold-Current Large-Wavelength InGaAs Quantum Well Vertical-Cavity Laser
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概要
- 論文の詳細を見る
An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a strain-compensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 μm.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-02-15
著者
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Kuo Hao-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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Chen I-liang
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
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CHIOU Chih-Hung
Industrial Technology Research Institute
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WANG Jin-Mei
Industrial Technology Research Institute
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CHANG Yu-Hsiang
Industrial Technology Research Institute
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Hsu Wei-chou
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Yu Hsin-chieh
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung University
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Sung Chia-Pin
Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Lee Tsin-Dong
Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Chang Yu-Hsiang
Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Chiou Chih-Hung
Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Yu Hsin-Chieh
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan 70101, R.O.C.
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