Modeling and Optimization of Sub-Wavelength Grating Nanostructures on Cu(In,Ga)Se Solar Cell (Special Issue : Photovoltaic Science and Engineering)

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概要

• 論文の詳細を見る

著者

• Kuo Hao-chung

  Institute Of Electro-optical Engineering National Chiao Tung University

• Lai Fang-i

  Department Of Electrical Engineering Yuan Ze University

• Kuo Shou-Yi

  Department of Electronic Engineering, Green Technology Research Center, Chang Gung University, Taoyuan 333, Taiwan

• Hsieh Ming-Yang

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

• Liao Yu-Kuang

  Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan

• Kao Ming-Hsuan

  Department of Photonics Engineering, Yuan-Ze University, Chungli 32003, Taiwan

関連論文

• Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
• High Temperature Stability 850-nm In_Al_Ga_As/Al_Ga_As Vertical-Cavity Surface-Emitting Laser with Single Al_Ga_As Current Blocking Layer
• Fabrication and Micro-Photoluminescence Investigation of Mg-Doped Gallium Nitride Nanorods
• Fabrication of High Speed Single Mode 1.27μm InGaAs:Sb-GaAsP Quantum Wells Vertical Cavity Surface Emitting Laser
• InGaN/GaN Multi-Quantum-Well Nanorods Fabricated by Plasma Etching Using Self-assembled Nickel Nano-masks
• Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H_2O
• Ultraviolet Random Laser Action of Nano-structured Zinc Oxide
• Ultraviolet Lasing of Sol-Gel Derived Zinc Oxide Polycrystalline Films
• Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
• Single-Mode Vertical-Cavity Surface-Emitting Lasers with a Deep-Etched Half-Ring-Shaped Holey Structure
• Light-output Enhanced of GaN-based Light-emitting Diodes by Photoelectrochemical oxidation in H_2O
• Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
• Study of InGaN red emission multiple Quantum Dots
• Highly Strained InGaAs/GaAs Quantum Well Vertical-Cavity Surface-Emitting Lasers
• Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition
• Efficiency Improvement of Single-Junction In0.5Ga0.5P Solar Cell with Compositional Grading p-Emitter/Window Capping Configuration
• Modeling and Optimization of Sub-Wavelength Grating Nanostructures on Cu(In,Ga)Se Solar Cell (Special Issue : Photovoltaic Science and Engineering)
• Characteristics of Multileaf Holey Light-Emitting Diodes for Fiber-Optic Communications
• Temperature-Dependent Photoluminescence of Highly Strained InGaAsN/GaAs Quantum Wells ($\lambda = 1.28--1.45$ μm) with GaAsP Strain-Compensated Layers
• Ultraviolet Lasing of Sol–Gel-Derived Zinc Oxide Polycrystalline Films
• Fabrication of Large-Area GaN-Based Light-Emitting Diodes on Cu Substrate
• High-Power Single-Mode Vertical-Cavity Surface-Emitting Lasers with Multi-Leaf Holey Structure
• Characteristics of Single-Mode InGaAs Submonolayer Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers
• Characteristics of P-Substrate Small-Aperture Holey Light-Emitting Diodes for Fiber-Optic Applications
• Characteristics of Cross-Shaped Polarization-Switching Vertical-Cavity Surface-Emitting Lasers for Dual-Channel Communications
• Study of InGaN Multiple Quantum Dots by Metal Organic Chemical Vapor Deposition
• Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
• Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode
• Effect of Annealing on Low-Threshold-Current Large-Wavelength InGaAs Quantum Well Vertical-Cavity Laser
• Light-Output Enhancement of GaN-Based Light-Emitting Diodes by Photoelectrochemical Oxidation in H2O

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