Characteristics of Single-Mode InGaAs Submonolayer Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers
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概要
- 論文の詳細を見る
An InGaAs submonolayer (SML) quantum-dot photonic-crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (${<}1$ ML) and GaAs. A single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. The beam profile and near-field image study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-12-15
著者
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Kuo Hao-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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LAI Fang-I
Institute of Electro-Optical Engineering, National Chiao-Tung University
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Lin Gray
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
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Chi Jim
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
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Yang Hung-Pin
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
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Hsu I-Chen
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan
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Hsiao Ru-Shang
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
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Maleev Nikolai
Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia
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Blokhin Sergej
Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia
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Lai Fang-I
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan
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