Characteristics of P-Substrate Small-Aperture Holey Light-Emitting Diodes for Fiber-Optic Applications
スポンサーリンク
概要
- 論文の詳細を見る
A small-aperture oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom distributed Bragg reflector (DBR), quantum wells (QWs), and top DBR, with a small-aperture holey structure at the center for light extraction. The internally reflected spontaneous emission can be extracted and collimated out of the etched hole. High-resolution imaging studies indicate that the device emits with a narrower beam mainly through the central etched hole region made it suitable for fiber-optic applications.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-05-15
著者
-
Kuo Hao-chung
Institute Of Electro-optical Engineering National Chiao Tung University
-
LAI Fang-I
Institute of Electro-Optical Engineering, National Chiao-Tung University
-
Kuo Hao-Chung
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan
-
Chi Jim
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
-
Yang Hung-Pin
Nanophotonic Center, Industrial Technology Research Institute, Chutung 310, Hsinchu, Taiwan
-
Liu Jui-Nung
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan
-
Lai Fang-I
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan
関連論文
- Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
- High Temperature Stability 850-nm In_Al_Ga_As/Al_Ga_As Vertical-Cavity Surface-Emitting Laser with Single Al_Ga_As Current Blocking Layer
- Fabrication and Micro-Photoluminescence Investigation of Mg-Doped Gallium Nitride Nanorods
- Fabrication of High Speed Single Mode 1.27μm InGaAs:Sb-GaAsP Quantum Wells Vertical Cavity Surface Emitting Laser
- InGaN/GaN Multi-Quantum-Well Nanorods Fabricated by Plasma Etching Using Self-assembled Nickel Nano-masks
- Fabrication of large-area GaN Vertical Light Emitting Diodes on Copper Substrates by Laser Lift-off
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
- Study of InGaN red emission multiple Quantum Dots
- Highly Strained InGaAs/GaAs Quantum Well Vertical-Cavity Surface-Emitting Lasers
- Low-Threshold-Current-Density, Long-Wavelength, Highly Strained InGaAs Laser Grown by Metalorganic Chemical Vapor Deposition
- Modeling and Optimization of Sub-Wavelength Grating Nanostructures on Cu(In,Ga)Se Solar Cell (Special Issue : Photovoltaic Science and Engineering)
- Characteristics of Multileaf Holey Light-Emitting Diodes for Fiber-Optic Communications
- High-Power Single-Mode Vertical-Cavity Surface-Emitting Lasers with Multi-Leaf Holey Structure
- Characteristics of Single-Mode InGaAs Submonolayer Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers
- Characteristics of P-Substrate Small-Aperture Holey Light-Emitting Diodes for Fiber-Optic Applications
- Characteristics of Cross-Shaped Polarization-Switching Vertical-Cavity Surface-Emitting Lasers for Dual-Channel Communications
- Study of InGaN Multiple Quantum Dots by Metal Organic Chemical Vapor Deposition
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode
- Effect of Annealing on Low-Threshold-Current Large-Wavelength InGaAs Quantum Well Vertical-Cavity Laser