Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
スポンサーリンク
概要
- 論文の詳細を見る
High-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage ($L$-$I$-$V$) characteristics of the fabricated devices in this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Kuo Hao-chung
Institute Of Electro-optical Engineering National Chiao Tung University
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SUNG Chia-Pin
Opto-Electronics & System Laboratory, Industrial Technology Research Institute
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YANG Hong-Pin
Opto-Electronics & System Laboratory, Industrial Technology Research Institute
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HUANG Chun-Yuan
Opto-Electronics & System Laboratory, Industrial Technology Research Institute
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LIN Yu-Wei
Opto-Electronics & System Laboratory, Industrial Technology Research Institute
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WANG Jin-Mei
Opto-Electronics & System Laboratory, Industrial Technology Research Institute
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Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
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Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
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Yu Hsin-chieh
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung University
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Kuo Hao-Chung
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Huang Chun-Yuan
Opto-Electronics & System Laboratory, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Lai Fang-I
Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan
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Lai Fang-I
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Lin Yu-Wei
Opto-Electronics & System Laboratory, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Wang Jin-Mei
Opto-Electronics & System Laboratory, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Su Yan-Kuin
Institute of Microelectronics, National Cheng Kung University, No. 1, University Rd., Tainan 701, Taiwan, R.O.C.
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Yu Hsin-Chieh
Institute of Microelectronics, National Cheng Kung University, No. 1, University Rd., Tainan 701, Taiwan, R.O.C.
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Sung Chia-Pin
Opto-Electronics & System Laboratory, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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