Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO
スポンサーリンク
概要
- 論文の詳細を見る
TiO<inf>2</inf>nanoparticles (NPs) are doped in silicone for encapsulation of GaN-based blue light-emitting diodes (LEDs). The average refractive index of silicone is increased by doping TiO<inf>2</inf>NPs with an average diameter of 21 nm, and the light extraction efficiency of GaN-based blue LEDs is also increased. Four different TiO<inf>2</inf>NPs doping profiles are evaluated including without TiO<inf>2</inf>NPs doping, uniform doping, doping around the LED chip only, and doping in the region far from the LED chip. LED, with TiO<inf>2</inf>NPs (weight percentage of 0.01%) doping around the LED chip only, has the highest luminous flux of 0.98 lm at 20 mA. The conventional blue LED without TiO<inf>2</inf>doping has the luminous flux of 0.94 lm at 20 mA. According to our calculations based on the experimental results, the enhancement of the luminous flux is 3 and 5% higher than that without TiO<inf>2</inf>doping packages at 20 and 80 mA, respectively. TiO<inf>2</inf>doped in silicone can not only increase the luminous flux but also inhibit the lumen degradation under the stress test for 1500 h.
- 2013-08-25
著者
-
Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
-
Lin Chun-liang
Department Of Advanced Materials Science Graduate School Of Frontier Science University Of Tokyo
-
Wang Pin-Chao
Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
関連論文
- High Brightness InGaN/GaN LEDs with ESD Protection
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- Improved Stopband of the Dual-Mode Ring Bandpass Filter Using Periodic Complementary Spilt-Ring Resonators(Microwaves, Millimeter-Waves)
- Spurious Suppression of a Parallel Coupled Microstrip Bandpass Filter with Simple Ring EBG Cells on the Middle Layer(Microwaves, Millimeter-Waves)
- Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors
- AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
- Low Temperature Metal Induced Crystallization of Amorphous Silicon by Nano-Gold-Particles
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
- Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
- Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- GaInNAs/GaAs p-i-n Photodetector with Multiquantum Well Structure
- Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
- Improvement in the Light Output Power of GaN-Based Light Emitting Diodes by One-Step Current Blocking Design
- Growth, Fabrication, and Characterization of InGaAsN Double Heterojunction Solar Cells
- Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow
- Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors
- Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography
- Bistable Resistive Switching Characteristics of Poly(2-hydroxyethyl methacrylate) Thin Film Memory Devices
- Strain-Compensated GaAsN/InGaAs Superlattice Structure Solar Cells
- Study of Pentacene-Based Organic Thin Film Transistor with PMMA as Insulator
- Color-Tunable Polymer Light-Emitting Diodes with Conjugated Polymer Homojunctions
- Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping
- Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence (Special Issue : Microprocesses and Nanotechnology)
- Effect of Post Annealing on Performance of Polymer Light-Emitting Devices
- GaN-Based Light-Emitting Diodes Grown on Photonic Crystal-Patterned Sapphire Substrates by Nanosphere Lithography
- Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
- InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures
- Structure of Silicene Grown on Ag(111)
- Investigation of Nonvolatile Memory Effect of Organic Thin-Film Transistors with Triple Dielectric Layers
- Enhancement of Optical Polarization Anisotropy of a-Plane InGaN/GaN Multiple Quantum Well Structure from Violet to Blue-Green Light
- Size-Dependent Resonant Cavity Light-Emitting Diodes for Collimating Concerns
- The Study of Stress Effects in GaN Epilayers on Very Thin Sapphire Substrates Using Chemical Mechanical Polishing Technique
- n-UV+Blue/Green/Red White Light Emitting Diode Lamps
- Postdeposition Annealing Effect on Redshift Behavior of Electroluminescence for Polymer Light-Emitting Diodes
- Interface Modification in Organic Thin Film Transistors
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
- GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes
- Efficiency Enhancement of Top Emission Organic Light-Emitting Diodes with Ni/Au Periodic Anode
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Lifetime Improvement of Organic Light Emitting Diodes using LiF Thin Film and UV Glue Encapsulation
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- Simulation and Fabrication of InGaP/Al0.98Ga0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions
- Radio-Frequency Inductors on High-Resistivity Silicon Substrates with a Nanocrystalline Silicon Passivation Layer
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
- GaInNAs p–i–n Photodetectors with Multiquantum Wells Structure
- Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes
- Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO
- GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer
- Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO₂ Nanoparticles in Specific Region of Encapsulation Silicone (Special Issue : Recent Advances in Nitride Semiconductors)
- Oxide Confined Collector-Up Heterojunction Bipolar Transistors
- 29pXK-5 Loss of Dirac fermions for the first layer silicene grown on Ag(111)
- High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes