Oxide Confined Collector-Up Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
An oxide confined collector-up heterojunction bipolar transistor (HBT) is proposed to reduce the leakage current and the parasitic capacitance in the extrinsic region. Two-dimensional numerical simulations were used to demonstrate the electrical characteristics of the new HBT structure. The current gain was evidently increased from 0.63 to 42 after the thin Al0.98Ga0.02As layer was appropriately oxidized, and the forward transport characteristics of the HBT were not obviously degraded by the added thin Al0.98Ga0.02As layer. The current gain of the HBT was only decreased about 3% to 4% due to the defects existing at the interfaces between the Al-oxide layer and its adjacent layers. Therefore, the proposed oxide confined collector-up HBT is expected to achieve excellent performance in applications of high frequency amplifiers.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-05-15
著者
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Chen Shi-ming
Epitech Technology Corporation
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Chen Wen-bin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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CHEN Hong-Ren
Epitech Technology Corporation
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Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Wu Meng-chi
Department Of Electrical Engineering National Tsing Hua University
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Su Juh-yuh
Department Of Electrical Engineering National Tsing Hua University
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Wang Hsin-chuan
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Lin Chun-liang
Department Of Advanced Materials Science Graduate School Of Frontier Science University Of Tokyo
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Chen Shi-Ming
Epitech Technology Corporation, No. 10 Da-Shuen 9th Rd, Tainan Science-Based Industrial Park, Tainan County, Taiwan 74145, R.O.C.
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Wang Hsin-Chuan
Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, No. 1 Ta Hsueh Road, Tainan, Taiwan 70101, R.O.C.
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Chen Hong-Ren
Epitech Technology Corporation, No. 10 Da-Shuen 9th Rd, Tainan Science-Based Industrial Park, Tainan County, Taiwan 74145, R.O.C.
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Wu Meng-Chi
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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Lin Chun-Liang
Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, No. 1 Ta Hsueh Road, Tainan, Taiwan 70101, R.O.C.
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Su Juh-Yuh
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.
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