High-Temperature and Low-Threshold-Current Operation of 1.5 μm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1998-06-01

著者

• Liu K‐s

  National Tsing Hua Univ. Hsin Chu Twn

• Liu Kuo-Shung

  Department of Materials Science and Engineering, National Tsing-Hua University

• Lin C‐c

  Department Of Materials Science And Engineering National Tsing Hua University

• Liu Kuo-shung

  Department Of Material Science And Engineering National Tsing-hua University

• WU Meng-Chyi

  Research Institute of Electrical Engineering, National Tsing Hua University

• Wu Meng-chi

  Department Of Electrical Engineering National Tsing Hua University

• Wu Ming-yuan

  Institute Of Electronics Engineering National Tsing Hua University

• Wu M‐c

  National Tsing Hua Univ. Hsinchu Twn

• LIN Chia-Chien

  Department of Materials Science and Engineering, National Tsing Hua Unversity

• SHIAO Hung-Pin

  Applied Research Lab., Telecommunication Laboratories, Chunghwa Telecom Co., Ltd.

• Wu Meng-chyi

  Research Institute Of Electrical Engineering National Tsing Hua University

• Shiao Hung-pin

  Applied Research Lab. Telecommunication Laboratories Chunghwa Telecom Co. Ltd.

• Lin Chia-Chien

  Department of Materials Science and Engineering, National Tsing Hua University

関連論文

• Structure and Dielectric Properties of SrTiO_3 Films Prepared by Pulsed Laser Deposition Technique
• Characteristics of BaTiO_3 Films Prepared by Pulsed Laser Deposition
• Influence of Buffer Materials on the Pyroelectric Properties of (Pb_La_)TiO_3 Thin Films
• Interdiffusion in (Pb_La_x)(Zr_xTi_)_O_3/SrRuO_3> Multilayer Thin Films Examined by Secondary Ions Mass Spectroscopy
• Crystallization Characteristics of LaNiO_3 Layers and Their Effect on Pulsed Laser Deposited (Pb_La_x)(Zr_yTi_)O_3 Thin Films
• Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
• Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes : Optics and Quantum Electoronics
• Growth and Characterization of High-Quality InAs_Sb_P_ Alloy by Liquid-Phase Epitaxy
• Thermal Properties of InAs_Sb_P_ Homostructure Diodes
• Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers
• Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes
• Electrical Properties of Microwave-Sintered (Sr_Pb_)TiO_3 Ceramics
• Facet-Coating Effects on the 1.3-μm Strained Multiple-Quantum-Well AlGaInAs/InP Laser Diodes
• High-Temperature and Low-Threshold-Current Operation of 1.5 μm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes
• Liquid-Phase Epitaxial Growth of GaInAsSb and the Properties of AlGaSb/GaSb/GaInAsSb Separate Absorption and Multiplication Avalanche Photodiodes
• Low-Concentration GaSb Avalanche Photodiodes Grown by Liquid-Phase Epitaxy Using the Compensation Method
• Effects of Substrate Misorientation and Zn Doping Characteristics on the Performance of AlGaInP Visible Light-Emitting Diodes
• Metalorganic Vapor Phase Epitaxy Growth and Characterization of (Al_xGa_)_In_P/Ga_In_P (x=0.4, 0.7 and 1.0) Quantum Welts on 15°-Off-(100) GaAs Substrates at High Growth Rate
• Photoluminescence Study of Heavily Te-doped GaAs Grown by Liquid-Phase Epitaxy
• Growth and Characterization of In_Ga_As_P_ Layers by Liquid-Phase Epitaxy Using Erbium Gettering
• Growth and Characterization of InGaP Yellow-Green Light-Emitting Diodes by Liquid-Phase Epitaxy
• Low-Temperature Deposition of Pb(Zr, Ti)O_3 Thin Films on Si Substrates Using Ba(Ng_Ta_)O_3 as Buffer Layer
• Properties of Ba(Mg_Ta_)O_3 Thin Films Prepared by Pulsed-Laser Deposition
• Donor Gettering of LPE (Liquid-Phase-Epitaxy) InGaAsP Layers in the Presence of Er
• Blue, Green and White InGaN Light-Emitting Diodes Grown on Si
• Electrical Properties of Microwave-Sintered ZnO Varistors
• Band Offsets of InN/GaN Interface
• Luminescence of N-Implanted In_Ga_P Grown by Liquid-Phase Epitaxy
• Raman Scattering of InAs_Sb_xP_y Quaternary Alloys
• Liquid-Phase Epitaxial Growth of In_Ga_P on GaP Substrates from Sn-Rich Solutions
• Properties of Ba(Mg1/3Ta2/3)O3 Thin Films Prepared by Pulsed-Laser Deposition
• Low-Temperature Deposition of Pb(Zr,Ti)O3 Thin Films on Si Substrates Using Ba(Mg1/3Ta2/3)O3 as Buffer Layer
• Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
• Electrical Properties of Microwave-Sintered (Sr0.4Pb0.6)TiO3 Ceramics
• Oxide Confined Collector-Up Heterojunction Bipolar Transistors
• Crystallization Characteristics of LaNiO3 Layers and Their Effect on Pulsed Laser Deposited (Pb 1-xLax)(ZryTi 1-y)O 3 Thin Films

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