Growth and Characterization of In_<0.83>Ga_<0.17>As_<0.39>P_<0.61> Layers by Liquid-Phase Epitaxy Using Erbium Gettering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-06-15
著者
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WU Meng-Chyi
Department of Electrical Engineering, National Tsing Hua University
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WU Meng-Chyi
Research Institute of Electrical Engineering, National Tsing Hua University
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WU Meng-Chyi
Institute of Electronics Engineering, National Tsing Hua University
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Wu Meng-chi
Department Of Electrical Engineering National Tsing Hua University
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Wu Ming-yuan
Institute Of Electronics Engineering National Tsing Hua University
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Wu M‐c
National Tsing Hua Univ. Hsinchu Twn
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CHIU Cheng-Ming
Research Institute of Electrical Engineering, National Tsing Hua University
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TU Yuan-Kuang
Telecommunication Laboratories, Ministry of Communications
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Wu Meng-chyi
Research Institute Of Electrical Engineering National Tsing Hua University
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Tu Y‐k
Chungwa Telecom Co. Ltd. Yang‐mei Twn
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Tu Yuan-kuang
Telecommunication Laboratories Chungwa Telecom Co. Ltd.
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Chiu C‐m
National Taiwan Univ. Sci. And Technol. Taipei Twn
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- Growth and Characterization of High-Quality InAs_Sb_P_ Alloy by Liquid-Phase Epitaxy
- Thermal Properties of InAs_Sb_P_ Homostructure Diodes
- Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers
- Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes
- Facet-Coating Effects on the 1.3-μm Strained Multiple-Quantum-Well AlGaInAs/InP Laser Diodes
- High-Temperature and Low-Threshold-Current Operation of 1.5 μm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes
- Liquid-Phase Epitaxial Growth of GaInAsSb and the Properties of AlGaSb/GaSb/GaInAsSb Separate Absorption and Multiplication Avalanche Photodiodes
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- Effects of Substrate Misorientation and Zn Doping Characteristics on the Performance of AlGaInP Visible Light-Emitting Diodes
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- Photoluminescence Study of Heavily Te-doped GaAs Grown by Liquid-Phase Epitaxy
- Growth and Characterization of In_Ga_As_P_ Layers by Liquid-Phase Epitaxy Using Erbium Gettering
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- Donor Gettering of LPE (Liquid-Phase-Epitaxy) InGaAsP Layers in the Presence of Er
- Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors during Hot-Carrier Stress
- Growih and Performance Study of Aluminum-Free InGaAs/GaAs/InGaAsP Strained Quantum-Well Pump Lasers : Optics and Quantum Electronics
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