Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors during Hot-Carrier Stress

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-02-15

著者

• Huang Jei-feng

  Taiwan Semiconductor Manufacturing Company Ltd.

• WU Meng-Chyi

  Institute of Electronics Engineering, National Tsing Hua University

• Wu Meng-chyi

  Institute Of Electronic Engineering National Tsing Hua University

• Lee Hung-chun

  Industrial Technology Research Institute

• Lee Li-ling

  Industrial Technology Research Institute

• Chen Shih-hui

  Institute Of Electronic Engineering National Tsing Hua University

• GONG Jeng

  Institute of Electronic Engineering, National Tsing Hua University

• HUANG Tsung-yi

  Institute of Electronic Engineering, National Tsing Hua University

• LIOU Ruey-hsin

  Taiwan Semiconductor Manufacturing Company Ltd.

• HSU Shun-liang

  Taiwan Semiconductor Manufacturing Company Ltd.

• Gong Jeng

  Institute Of Electronic Engineering National Tsing Hua University

• Huang Tsung-yi

  Institute Of Electronic Engineering National Tsing Hua University

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• Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors during Hot-Carrier Stress
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• Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors during Hot-Carrier Stress

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