A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current
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概要
- 論文の詳細を見る
The behavior of WOX resistive random access memory (ReRAM) is a strong function of the top electrode material, which controls the conduction mechanism and the forming process. When using a top electrode with low work function, the current conduction is limited by space charges. On the other hand, the mechanism becomes thermionic emission for devices with a high work function top electrode. These (thermionic) devices are also found to have higher initial resistance, reduced forming current, and larger resistance window. Based on these insights and considering the compatibility to complementary metal--oxide--semiconductor (CMOS) process, we proposed to use Ni as the top electrode for high performance WOX ReRAM devices. The new Ni/WOX/W device can be switched at a low current density less than $8\times 10^{5}$ A/cm2, with RESET/SET resistance ratio greater than 100, and extremely good data retention of more than 300 years at 85 °C.
- 2011-04-25
著者
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Yao Yeong-der
Department Of Physics National Chung Cheng University
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Gong Jeng
Institute Of Electronic Engineering National Tsing Hua University
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Horng Sheng-Fu
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan, R.O.C.
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Chen Yi-Chou
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Tsai Shih-Chang
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Chien Wei-Chih
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Lee Feng-Ming
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Lin Yu-Yu
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Lai Erh-Kun
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Yeh Chiao-Wen
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Lee Ching-Hsiung
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Huang Yu-Kai
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Chen Chun-Fu
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Kao Hsiao-Feng
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Shih Yen-Hao
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Hsieh Kuang-Yeu
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Lu Chih-Yuan
Emerging Central Lab., Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
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Yao Yeong-Der
Department of Materials Engineering, Tatung University, Taipei 104, Taiwan
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Horng Sheng-Fu
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
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Gong Jeng
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
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