Investigation of Discrete Dopant Fluctuation Effects in Sub-45-nm Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Cell

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概要

• 論文の詳細を見る

• The effects of discrete dopant fluctuation in sub-45-nm silicon–oxide–nitride–oxide–silicon (SONOS) flash memory cells are studied for the first time. In addition to the well-known fluctuation in threshold voltage, the wide threshold voltage distribution also affects cell retention, which results in a severe reliability problem in planar SONOS flash memory cells beyond the 22 nm generation. Similar discrete dopant effects are observed in the fin field-effect transistor (FinFET) structure. The FinFET SONOS flash memory cell having a nearly un-doped channel is shown to be promising for sub-22-nm SONOS technologies.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-02-25

著者

• Horng Sheng-Fu

  Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan, R.O.C.

• Horng Sheng-Fu

  Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.

• Liao Yi-Ying

  Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan, R.O.C.

関連論文

• A Novel Ni/WOX/W Resistive Random Access Memory with Excellent Retention and Low Switching Current
• Investigation of Discrete Dopant Fluctuation Effects in Sub-45-nm Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory Cell

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