Hot-Carrier Degradation Rate of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors under Maximum Substrate Current Stress Conditions
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概要
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In this study, hot-carrier stresses in high-voltage (HV) lateral diffused metal-oxide-semiconductor field-effect transistors (LDMOSFETs) are applied under maximum substrate current ($I_{\text{Sub,max}}$) conditions with different $V_{\text{DS}}$ and $V_{\text{GS}}$. The power index of the hot-carrier degradation rates is not always 0.5 upon stressing under different $I_{\text{Sub,max}}$ conditions, and the HV LDMOSFETs do not exhibit the hot-carrier degradation behavior observed in low-voltage (LV) metal–oxide–semiconductor field-effect transistors (MOSFETs). In order to explain why the degradation rates under $I_{\text{Sub,max}}$ conditions differ with different biases, two-dimensional simulators are used to elucidate the degradation mechanism in HV LDMOSFETs. It is found that under different $I_{\text{Sub,max}}$ conditions, the highest impact ionization is located at different positions in the drift region of the device. Due to the different gate-control abilities of these regions, the current densities affected by the hot-carrier-induced interface-trapped charges are different. Thus the hot-carrier degradation rates also differ. Furthermore, due to the different depths of the impact ionization region, the amounts of initial hot-carrier-induced interface-trapped charges differ and thus the power-law pre-coefficient A also differs.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-01-15
著者
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Wu Meng-chyi
Institute Of Electronic Engineering National Tsing Hua University
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Chen Shih-hui
Institute Of Electronic Engineering National Tsing Hua University
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Gong Jeng
Institute Of Electronic Engineering National Tsing Hua University
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Wu Meng-chyi
Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C
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Su Alex
Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C
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Chen Shih-hui
Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C
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Gong Jeng
Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C
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