Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers
スポンサーリンク
概要
- 論文の詳細を見る
- 2003-12-15
著者
-
Ho Wen-jeng
Telecommunication Laboratories Chunghwa Telecom Co. Ltd.
-
Ho Wen-jeng
Advanced Tech Laboratory Telecommunication Laboratories Changhwa Telecom Co. Ltd.
-
WU Ming-Yuan
Institute of Electronics Engineering, National Tsing Hua University
-
LEI Po-Hsun
Department of Computer Science Engineering, Diwan College of Management
-
TSAI Chia-Lung
Institute of Electronics Engineering, National Tsing Hua University
-
HU Chih-Wei
Institute of Electronics Engineering, National Tsing Hua University
-
WU Meng-Chyi
Institute of Electronics Engineering, National Tsing Hua University
-
Hu Chih-wei
Institute Of Electronics Engineering National Tsing Hua University
-
Wu Ming-yuan
Institute Of Electronics Engineering National Tsing Hua University
-
Wu M‐c
National Tsing Hua Univ. Hsinchu Twn
-
Wu Meng-chyi
Institute Of Electronic Engineering National Tsing Hua University
-
Lei Po-hsun
Institute Of Electronics Engineering National Tsing Hua University
-
Tsai Chia-lung
Institute Of Electronics Engineering National Tsing Hua University
関連論文
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes : Optics and Quantum Electoronics
- Growth and Characterization of High-Quality InAs_Sb_P_ Alloy by Liquid-Phase Epitaxy
- Thermal Properties of InAs_Sb_P_ Homostructure Diodes
- Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers
- Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes
- Facet-Coating Effects on the 1.3-μm Strained Multiple-Quantum-Well AlGaInAs/InP Laser Diodes
- High-Temperature and Low-Threshold-Current Operation of 1.5 μm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes
- Liquid-Phase Epitaxial Growth of GaInAsSb and the Properties of AlGaSb/GaSb/GaInAsSb Separate Absorption and Multiplication Avalanche Photodiodes
- Low-Concentration GaSb Avalanche Photodiodes Grown by Liquid-Phase Epitaxy Using the Compensation Method
- Effects of Substrate Misorientation and Zn Doping Characteristics on the Performance of AlGaInP Visible Light-Emitting Diodes
- Metalorganic Vapor Phase Epitaxy Growth and Characterization of (Al_xGa_)_In_P/Ga_In_P (x=0.4, 0.7 and 1.0) Quantum Welts on 15°-Off-(100) GaAs Substrates at High Growth Rate
- Photoluminescence Study of Heavily Te-doped GaAs Grown by Liquid-Phase Epitaxy
- Growth and Characterization of In_Ga_As_P_ Layers by Liquid-Phase Epitaxy Using Erbium Gettering
- Growth and Characterization of InGaP Yellow-Green Light-Emitting Diodes by Liquid-Phase Epitaxy
- Effects of Sulfide Treatment of Indium Tin Oxide on Efficiency of Polymer Light-Emitting Diodes
- Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors during Hot-Carrier Stress
- Deposition of Transparent Indium Molybdenum Oxide Thin Films and the Application for Organic Solar Cells (Special Issue : Solid State Devices and Materials (1))
- Measurement of Junction Temperature in a Nitride Light-Emitting Diode
- Hot-Carrier Degradation Rate of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors under Maximum Substrate Current Stress Conditions
- Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors during Hot-Carrier Stress