Measurement of Junction Temperature in a Nitride Light-Emitting Diode
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概要
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The steady junction temperatures of a nitride light-emitting diode (LED) under various currents were measured. The measurements revealed a thermal resistance of $R_{\text{T}} = 63.47$ K/W. These data were further used to determine the evolution of the junction temperature with time. The transients of the junction temperature after the device was turned on were found to be described effectively on the basis of the theoretical curves. The thermal conductivity of the substrate was deduced and found to be higher for two reasons. The first is related to the optical power carried by photons. The second involves the difference between the p-mesa area and the chip area, which is a unique characteristic of nitride LEDs grown on insulating substrates.
- 2008-12-25
著者
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Wu Meng-chyi
Institute Of Electronic Engineering National Tsing Hua University
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Chen Nie-chuan
Institute Of Electro-optical Engineering Chang Gung University
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Wu Meng-Chyi
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan, Republic of China
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Lin Chih-Min
Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan, Republic of China
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Yang Yen-Kai
Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan, Republic of China
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Shen Chi
Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan, Republic of China
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Wang Tong-Wen
Institute of Electronics Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan, Republic of China
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Chen Nie-Chuan
Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan, Republic of China
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