Facet-Coating Effects on the 1.3-μm Strained Multiple-Quantum-Well AlGaInAs/InP Laser Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-15
著者
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Liu K‐s
National Tsing Hua Univ. Hsin Chu Twn
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Liu Kuo-Shung
Department of Materials Science and Engineering, National Tsing-Hua University
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Lin C‐c
Department Of Materials Science And Engineering National Tsing Hua University
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Liu Kuo-shung
Department Of Material Science And Engineering National Tsing-hua University
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WU Meng-Chyi
Department of Electrical Engineering, National Tsing Hua University
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WU Meng-Chyi
Research Institute of Electrical Engineering, National Tsing Hua University
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WU Meng-Chyi
Institute of Electronics Engineering, National Tsing Hua University
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Wu Meng-chi
Department Of Electrical Engineering National Tsing Hua University
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Wu Ming-yuan
Institute Of Electronics Engineering National Tsing Hua University
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Wu M‐c
National Tsing Hua Univ. Hsinchu Twn
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LIN Chia-Chien
Department of Materials Science and Engineering, National Tsing Hua Unversity
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KO Sun-Chien
Applied Research Lab.Telecommunication Laboratories, Chunghwa Co., Ltd.
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WANG Wei-Han
Applied Research Lab.Telecommunication Laboratories, Chunghwa Co., Ltd.
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Wu Meng-chyi
Research Institute Of Electrical Engineering National Tsing Hua University
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Wang W‐h
Ritek Corp. Hsin Chu Industrial Park Twn
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Ko Sun-chien
Applied Research Lab.telecommunication Laboratories Chunghwa Co. Ltd.
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Lin Chia-Chien
Department of Materials Science and Engineering, National Tsing Hua University
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- Interdiffusion in (Pb_La_x)(Zr_xTi_)_O_3/SrRuO_3> Multilayer Thin Films Examined by Secondary Ions Mass Spectroscopy
- Crystallization Characteristics of LaNiO_3 Layers and Their Effect on Pulsed Laser Deposited (Pb_La_x)(Zr_yTi_)O_3 Thin Films
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes : Optics and Quantum Electoronics
- Growth and Characterization of High-Quality InAs_Sb_P_ Alloy by Liquid-Phase Epitaxy
- Thermal Properties of InAs_Sb_P_ Homostructure Diodes
- Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers