Liquid-Phase Epitaxial Growth of In_<0.35>Ga_<0.65>P on GaP Substrates from Sn-Rich Solutions

概要

論文の詳細を見る
Good-quality In_<0.35>Ga_<0.65>P layers have been grown on (111)B-oriented GaP substrates by liquid-phase epitaxy from Sn-rich solutions using the supercooling technique. The InGaP epitaxial layers exhibit a mirrior-like surface morphology and a flat interface without any inclusions. The growth rate of InGaP layers grown from Sn-rich solutions is found to be considerably lower than that from In-rich solutions. The minimum electron concentration of 1.1×10^<18>cm^<-3> obtained is attributed to the Sn-doped epitaxial layer grown from the Sn-rich solution. Three emission peaks in photoluminescence spectra of the InGaP layers are indentified as the near band-to-band, donor-to-valence band, and donor-acceptor pair transitions. In addition, the InGaP/GaP sample has a good interface examined by high resolution transmission electron microscope.
社団法人応用物理学会の論文
1997-09-15