Properties of Ba(Mg1/3Ta2/3)O3 Thin Films Prepared by Pulsed-Laser Deposition
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概要
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The dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) microwave thin films synthesized by an in situ pulsed-laser deposition (PLD) process were compared with those prepared by a two-step PLD process. The onset of crystallization for the BMT films is approximately 400°C, when in situ deposited, and is approximately 550°C, when two-step processed. Dielectric measurements indicate that complete crystallization for BMT films can be achieved only by processing the films at a sufficiently high temperature, which is 600°C for an in situ PLD process and is 800°C for a two-step PLD process. The microwave dielectric properties of BMT films, which were directly measured by an evanescent microwave probe (EMP) technique at 2.65 GHz measuring frequency, increase with substrate temperature, resulting in dielectric constant $K{=}33.3$ and dissipation factor $\tan\delta$ =0.0158.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-12-15
著者
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Liu Kuo-shung
Department Of Material Science And Engineering National Tsing-hua University
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Lin I-nan
Material Science Center National Tsing-hua University
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CHU Ying-Hao
Department of Materials Science & Engineering, National Tsing Hua University
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LIN Su-Jien
Department of Materials Science & Engineering, National Tsing Hua University
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Chu Ying-Hao
Department of Materials Science & Engineering, National Tsing Hua University, Hsin Chu, Taiwan 300, R.O.C.
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Lin Su-Jien
Department of Materials Science & Engineering, National Tsing Hua University, Hsin Chu, Taiwan 300, R.O.C.
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Lin I-Nan
Materials Science Center, National Tsing Hua University, Hsin Chu, Taiwan 300, R.O.C.
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