Evaluation of the WOx Film Properties for Resistive Random Access Memory Application

スポンサーリンク

概要

• 論文の詳細を見る

• The formation condition, microstructure, and growth kinetics of the WOx layer for WOx resistive random access memory are investigated. To understand the optimal condition for the rapid thermal oxidation process which forms the WOx layer, various annealing temperature and annealing time are systemically studied through transmission electron microscopy, X-ray diffraction, Raman spectra analyses and electrical characterizations. The growth kinetics for WOx under rapid thermal oxidation is found similar to the one for thermal oxidation on silicon. The electrical forming voltages of the WOx cells are also found independent from the oxide thickness, which further suggests the switching behavior of WOx resistive random access memory takes place at the interface but not the bulk.

• 2012-04-25

著者

• Hong Tian-jue

  Department Of Materials Science And Engineering National Tsing Hua University

• LIN Su-Jien

  Department of Materials Science & Engineering, National Tsing Hua University

• Wu Tai-bor

  Department Of Material Science And Engineering National Tsing Hua University

• Chen Yi-Chou

  Macronix Emerging Central Laboratory, Macronix International Co., Ltd., Hsinchu 300, Taiwan, R.O.C.

• Chen Yi-Yueh

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.

• Chien Wei-Chih

  Macronix Emerging Central Laboratory, Macronix International Co., Ltd., Hsinchu 300, Taiwan, R.O.C.

• Lee Ming-Hsiu

  Macronix Emerging Central Laboratory, Macronix International Co., Ltd., Hsinchu 300, Taiwan, R.O.C.

• Chuang Alfred

  Macronix Emerging Central Laboratory, Macronix International Co., Ltd., Hsinchu 300, Taiwan, R.O.C.

• Lu Chih-Yuan

  Macronix Emerging Central Laboratory, Macronix International Co., Ltd., Hsinchu 300, Taiwan, R.O.C.

• Hong Tian-Jue

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.

• Lin Su-Jien

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.

• Wu Tai-Bor

  Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.

関連論文

• Low-Temperature Deposition of Pb(Zr, Ti)O_3 Thin Films on Si Substrates Using Ba(Ng_Ta_)O_3 as Buffer Layer
• Properties of Ba(Mg_Ta_)O_3 Thin Films Prepared by Pulsed-Laser Deposition
• Effects of (100)-Textured LaNiO_3 Electrode on Crystallization and Properties of Sol-Gel-Derived Pb(Zr_Ti)O_3 Thin Films
• Deposition and Characterization of Ferroelectric Pb[(Mg_Nb_)_xTi_]0_3 Thin Films by RF Magnetron Sputtering
• Ferroelectric and Dielectric Characteristics of (Pb_La_y)[Mg_/3Nb_/3Ti_]O_3 Thin Films Prepared by RF Magnetron Sputtering
• Microstructure and Properties of Al_CoCrCuFeNiTi_x (x=0-2.0) High-Entropy Alloys
• Electrical Properties of High-Temperature Annealed Boron-Implanted Hg_Cd_Te
• Effect of Etching on Composition and Morphology of CdTe(111) Surfaces
• Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs
• Highty (100)-Oriented Thin Films of Sol-Gel Derived Pb[(Mg)_Nb_)_Ti_]O_3 Prepared on Textured LaNiO_3 Electrode
• Effects of Bottom Electrode on the Structural and Electrical Characteristics of Barium Titanate Thin Films
• Structural and Electrical Characteristics of Ba(Zr_Ti_)O_3 Thin Films Deposited on LaNiO_3 Electrode by RF Magnetron Sputtering
• Annealing Effects on the Hall Properties of Hg_Cd_xTe Heterolayers Grown by Liquid Phase Expitaxy
• Effect of Sputtering-Target Composition on the Texturization of LaNiO3 Thin Films on Si Substrate
• Effects of LaNiO_3 Conductive Buffer Layer on The Structural and Electrical Characteristics of Ba_Sr_TiO_3 Thin Films Prepared by RF Magnetron Sputtering
• Effects of N_2O Plasma Annealing on the Characteristics of Tantalum Oxide Thin Films Deposited on TaN/Ta Electrode
• Polarization Switching Characteristics of Pb(Zr_Ti_)O_3 Thin Films Deposited on Vacuum-Annealed PtO_x/Pt Electrode
• Structural and Electrical Characteristics of Ba(Zr0.12Ti0.88)O3 Thin Films Deposited on LaNiO3 Electrode by RF Magnetron Sputtering
• Microstructure and Nonohmic Properties of ZnO-V_2O_5 Ceramics
• Evaluation of the WOx Film Properties for Resistive Random Access Memory Application
• Properties of Ba(Mg1/3Ta2/3)O3 Thin Films Prepared by Pulsed-Laser Deposition
• Low-Temperature Deposition of Pb(Zr,Ti)O3 Thin Films on Si Substrates Using Ba(Mg1/3Ta2/3)O3 as Buffer Layer

もっと見る 閉じる

スポンサーリンク