Polarization Switching Characteristics of Pb(Zr_<0.5>Ti_<0.5>)O_3 Thin Films Deposited on Vacuum-Annealed PtO_x/Pt Electrode

概要

論文の詳細を見る
The structure of the vacuum-annealed PtO_x/Pt electrode and its influence on improving the polarization switching characteristics of Pb(Zr_<0.5>Ti_<0.5>)O_3 (PZT) thin films deposited on the electrode were investigated. The PtO_x/Pt electrodes were fabricated by RF magnetron sputtering in a gas mixture of Ar/O_2 followed by in situ vacuum annealing at 300-400℃. The increase of annealing temperature increased the degree of reduction of PtO_x to Pt, and a porous structure composed of loosely packed columns was formed in the annealed PtO_x. electrodes. A microstructure containing discrete columns in the middle was further formed in the PtO_x electrode after the deposition and crystallization of the PZT films, and a more dense PZT film was ohtained in the case of deposition on the PtO_x electrode having a higher degree of reduction. Finally, a significant improvement of polarization switching characteristics and low-voltage operation performance was achieved for the PZT capacitors prepared on a well-reduced PtO_x, electrode consisting of an open columnar structure.
社団法人応用物理学会の論文
2002-10-15