Electrical Properties of High-Temperature Annealed Boron-Implanted Hg_<0.7>Cd_<0.3>Te

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概要

• 論文の詳細を見る

• The annealing effect of boron ion implantation in p-type Hg_<0.7>Cd_<0.3>Te/CdTe epilayers has been investigated. The implanted samples were annealed at temperatures ranging from 350℃ to 500℃ under saturated and nonsaturated Hg vapor pressure without encapsulation. The electrical activity of the n^+-layer for samples annealed at high temperatures was found to be related to the activation of implanted boron ions. Generation-recombination noise measurement showed that the impurity energy level is about 5.6 meV.

• 社団法人応用物理学会の論文
• 1992-06-15

著者

• Gong J

  National Tsing Hua Univ. Hsinchu Twn

• Wu T‐b

  National Tsing Hua Univ. Hsinchu Twn

• Wu Tai-bar

  Department Of Materials Science And Engineering National Tsing-hua University

• WU Tai-Bor

  Department of Materials Science and Engineering, National Tsing Hua University

• Lam Kai-yuen

  Department Of Electrical Engineering National Tsing Hua University

• GONG Jeng

  Department of Electronics Engineering, National Thing Hua University

• LOU Jen-Chung

  Department of Electrical Engineering, National Tsing Hua University

• Gong Jeng

  Department Of Electrical Engineer National Tsing Hua University

• Lou Jen-chung

  Department Of Electrical Engineering National Tsing Hua University

• Wu Tai-bor

  Department Of Material Science And Engineering National Tsing Hua University

• Wu Tai-bor

  Department Of Materials Science And Engineering National Tsing Hua University

• Wu Tai-bor

  Materials Science Center National Tsing-hua University

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