Annealing Effects on the Hall Properties of Hg_<1-x>Cd_xTe Heterolayers Grown by Liquid Phase Expitaxy

概要

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Hg_<1-x>Cd_xTe (MCT) heterolayers consisting of a wide-band-gap layer on the top of a narrow-band-gap one were grown on (111) B CdTe substrates by liquid phase epitaxy from Te-rich solution. Both N-on-p and P-on-n type heterostructures were obtained by extrinsical doping of the top layer with Ga or Sb and a post-growth heat treatment. A two-zone annealing of the Ga-doped heterolayers was done for obtaining the N-on-p structure, and satisfactory electrical properties were obtained. On the other hand, a two-step two-zone annealing of the Sb-doped heterolayers was conducted for the P-on-n structure. A high temperature annealing was first performed to activate the p-type characteristics of the Sb-doped layer, and a low temperature annealing was subsequently conducted to convert the conductivity of the active layer (i. e., the bottom layer) from p- to n-type. The formation of P on n structure was confirmed by measurement of magnetic field dependent Hall coefficient of the heterolayers and data fitting with a three-carrier Hall coefficient model.
社団法人応用物理学会の論文
1995-08-15