Highty (100)-Oriented Thin Films of Sol-Gel Derived Pb[(Mg)_<1/3>Nb_<2/3>)_<0.675>Ti_<0.325>]O_3 Prepared on Textured LaNiO_3 Electrode

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概要

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• Highly (100)-oriented thin films of Pb[(Mg_<1/3>Nb_<2/3>)_<0.235>]O_3 (PMNT) were fabricated by sol-gel method on (100)-textured LaNiO_3 (LNO) metallic oxide electrode. The textured LaNiO_3 layer was prepared by rf magnetron sputtering at 250℃ on Si, SiO_2/Si or Pt/Ti/SiO_2/Si substrates. A well orientation match was found between the PMNT and LNO layers. The annealing temperature for obtaining a pure perovskite PMNT film was reduced for about 50℃ by using the LNO-coated substrates comparing to that without. A well-developed grain structure was also formed for the former. Satisfactory dielectric and ferroelectric characteristics were observed from the (100)-oriented PMNT thin films prepared at 700℃ on LNO, as compared to the randomly oriented one on Pt electrode. However, an increase of annealing temperature would cause a more serious out-diffusion of LNO which gradually deteriorated the property of PMNT films deposited on LNO.

• 社団法人応用物理学会の論文
• 1995-07-15

著者

• Hong Tian-jue

  Department Of Materials Science And Engineering National Tsing Hua University

• Yang Tian-juh

  Department Of Material Science And Engineering National Tsing Hua University Hsinchu

• WU Tai-Bor

  Department of Materials Science and Engineering, National Tsing Hua University

• Yang T‐j

  National Chiao‐tung Univ. Hsinchu Twn

• Wu Tai-bor

  Department Of Material Science And Engineering National Tsing Hua University

• SHYU Ming-Jyh

  Department of Materials Science and Engineering, National Tsing Hua University

• Shyu Ming-jyh

  Department Of Materials Science And Engineering National Tsing Hua University

関連論文

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• Ferroelectric and Dielectric Characteristics of (Pb_La_y)[Mg_/3Nb_/3Ti_]O_3 Thin Films Prepared by RF Magnetron Sputtering
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