Low-Temperature Deposition of Pb(Zr, Ti)O_3 Thin Films on Si Substrates Using Ba(Ng_<1/3>Ta_<2/3>)O_3 as Buffer Layer
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-08-15
著者
-
Lin I‐n
Materials Science Center National Tsing Hua University
-
Lin I‐n
Material Science Center National Tsing-hua University
-
Lin I-nan
Materials Science Center National Tsing Hua University
-
Lin I‐n
Materials Science Center National Tsing-hua University
-
Liu K‐s
National Tsing Hua Univ. Hsin Chu Twn
-
Liu Kuo-Shung
Department of Materials Science and Engineering, National Tsing-Hua University
-
Liu Kuo-shung
Department Of Material Science And Engineering National Tsing-hua University
-
CHU Ying-Hao
Department of Materials Science & Engineering, National Tsing Hua University
-
LIANG Chen-Wei
Department of Materials Science & Engineering, National Tsing Hua University
-
LIN Su-Jien
Department of Materials Science & Engineering, National Tsing Hua University
関連論文
- Structure and Dielectric Properties of SrTiO_3 Films Prepared by Pulsed Laser Deposition Technique
- Characteristics of BaTiO_3 Films Prepared by Pulsed Laser Deposition
- Selected-area Deposition of Diamond Films on Silicon Nitride-coated Silicon Substrates Using Negatively Biased Microwave Plasma Enhanced Chemical Vapor Deposition Technique
- Influence of Buffer Materials on the Pyroelectric Properties of (Pb_La_)TiO_3 Thin Films
- Interdiffusion in (Pb_La_x)(Zr_xTi_)_O_3/SrRuO_3> Multilayer Thin Films Examined by Secondary Ions Mass Spectroscopy
- Crystallization Characteristics of LaNiO_3 Layers and Their Effect on Pulsed Laser Deposited (Pb_La_x)(Zr_yTi_)O_3 Thin Films
- Microstructures and Electrical Properties of V_2O_5-based Multicomponent ZnO Varistors Prepared by Microwave Sintering Process
- Electrical Properties of ZnO Varistors Prepared by Microwave Sintering Process
- Growth of Epitaxial-Like (Sr_Ba_)Nb_2O_6 Ferroelectric Films
- 24-I-12 Correlation of Microwave Dielectric Properties and Normal Vibration Modes of Ba(Mg_Ta_)O_3-Series Materials
- 06-P-25 Microwave Sintering of Base-Metal-Electroded BaTiO_3 Capacitor Materials Co-Doped with MgO/Y_2O_3 Additives
- Electron Field Emission Characteristics of Planar Field Emission Array with Diamondlike Carbon Electron Emitters
- Electron Emission Characteristics of Diamond-like Films Synthesized by Pulsed Laser Deposition Technique
- Electron Emission Characteristics of Diamond-like Films Synthesized by Pulsed Laser Deposition Technique
- Comparison of Structure and Electron-Field-Emission Behavior of Chemical-Vapor-Deposited Diamond and Pulsed-Laser-Deposited Diamond-Like Carbon Films
- Microscopic Examination of the Microwave Sintered (Pb_Sr_)TiO_3 Positive-Temperature-Coefficient Resistor Materials
- Growth Behavior of Y_1Ba_2Cu_3O_ Superconducting Thin Films Using Laser Ablation Technique
- Optical and Electrical Properties of Microwave Dielectric Thin Films (Proceedings of the 12th International Conference on Ternary and Multinary Compounds ICTMC-12)
- Terahertz Response of Bulk Ba(Mg_Ta_)O_3
- Effect of Ba_5Ta_4gO_ Incorporation on Sintering Behavior and Microwave Dielectric Properties of Ba(Ma_Ta_)O_3 Materials
- Effect of SiO_2 Sintering Aids on High Critical Temperature Positive Temperature Coefficient of Resistivity Properties of (Pb_Sr_Ba_)TiO_3 Materials Prepared by Microwave Sintering Technique
- Electrical Properties of Microwave-Sintered (Sr_Pb_)TiO_3 Ceramics
- Dielectric Properties of xBa(Mg_Ta_)O_3-(1 - x )Ba(Mg_Nb_) O_3 Complex Perovskite Ceramics
- Facet-Coating Effects on the 1.3-μm Strained Multiple-Quantum-Well AlGaInAs/InP Laser Diodes
- High-Temperature and Low-Threshold-Current Operation of 1.5 μm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes
- Low-Temperature Deposition of Pb(Zr, Ti)O_3 Thin Films on Si Substrates Using Ba(Ng_Ta_)O_3 as Buffer Layer
- Properties of Ba(Mg_Ta_)O_3 Thin Films Prepared by Pulsed-Laser Deposition
- Modeling on the Resistivity-Temperature Properties of (Pb_Sr_)TiO_3 Materials Prepared by the Rapid Thermal Sintering Process
- Influence of Pt, RuO_2 and SrRuO_3 Intermediate Layers on Characteristics of (Sr_Ba_)Nb_2O_6 Thin Films
- Blue, Green and White InGaN Light-Emitting Diodes Grown on Si
- Electrical Properties of Microwave-Sintered ZnO Varistors
- Band Offsets of InN/GaN Interface
- Microstructure and Properties of Al_CoCrCuFeNiTi_x (x=0-2.0) High-Entropy Alloys
- Evaluation of the WOx Film Properties for Resistive Random Access Memory Application
- Properties of Ba(Mg1/3Ta2/3)O3 Thin Films Prepared by Pulsed-Laser Deposition
- Low-Temperature Deposition of Pb(Zr,Ti)O3 Thin Films on Si Substrates Using Ba(Mg1/3Ta2/3)O3 as Buffer Layer
- Electrical Properties of Microwave-Sintered (Sr0.4Pb0.6)TiO3 Ceramics
- Crystallization Characteristics of LaNiO3 Layers and Their Effect on Pulsed Laser Deposited (Pb 1-xLax)(ZryTi 1-y)O 3 Thin Films