Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs

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A complementary metal oxide semiconductor (CMOS)-compatible WOx based resistive memory has been developed. The WOx memory layer is made from rapid thermal oxidation of W plugs. The device performs excellent electrical properties. The switching speed is extremely fast (${\sim}2$ ns) and the programming voltage (${<}1.4$ V) is low. For single-level cell (SLC) operation, the device shows a large resistance window, and $10^{8}$-cycle endurance. For multi-level cell (MLC) operation, it demonstrates 2-bit/cell storage with the endurance up to 10000 times. The rapid thermal oxidation (RTO) WOx resistance random access memory (RRAM) is very promising for both high-density and embedded memory applications.
2010-04-25

著者

Chen Yi-Chou
Macronix Emerging Central Laboratory, Macronix International Co., Ltd., Hsinchu 300, Taiwan, R.O.C.
Shih-Chang Tsai
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Yen-Hao Shih
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Chien Wei-Chih
Macronix Emerging Central Laboratory, Macronix International Co., Ltd., Hsinchu 300, Taiwan, R.O.C.
Erh-Kun Lai
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Lai Erh-Kun
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Tian-Jue Hong
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Yu-Yu Lin
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Kuo-Pin Chang
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Yeong-Der Yao
Department of Physics and Institute of Applied Science and Engineering, Fu Jen University, Taipei 242, Taiwan, R.O.C.
Pang Lin
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
Sheng-Fu Horng
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
Jeng Gong
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R.O.C.
Ching-Hsiung Lee
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Sheng-Hui Hsieh
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Chun-Fu Chen
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Kuang-Yeu Hsieh
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Rich Liu
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.
Chih-Yuan Lu
Macronix International Co., Ltd., 16 Li-Hsin Road, Science Park, Hsinchu 300, Taiwan, R.O.C.

Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs

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