Luminescence of N-Implanted In_<0.32>Ga_<0.68>P Grown by Liquid-Phase Epitaxy
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概要
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The photoluminescence spectra of N-implanted In_<0.32>Ga_<0.68>P epitaxial layers grown on GaAs_<0.61>P_<0.39> substrates by liquid-phase epitaxy have been investigated at different annealing temperatures and times by the rapid thermal annealing technique. The nitrogen level is located ∼110 meV below the Γ-band minimum for the In_<0.32>Ga_<0.68>P crystal. The activation energy necessary to place N atoms into sites to form the N-isoelectronic trap is 0.47 and 0.48 eV in Ar and N_2 ambients, respectively. The optimum post-implantation annealing condition to obtain the maximum isoelectronic trap emission intensity is at 800℃ for 30-s duration in both Ar and N_2 ambients.
- 社団法人応用物理学会の論文
- 1992-09-15
著者
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WU Meng-Chyi
Research Institute of Electrical Engineering, National Tsing Hua University
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CHEN Chyuan-Wei
Research Institute of Electrical Engineering, National Tsing Hua University
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Wu Meng-chyi
Research Institute Of Electrical Engineering National Tsing Hua University
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Kuo Li-kuang
Research Institute Of Electrical Engineering National Tsing Hua University
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Chen Chyuan-wei
Research Institute Of Electrical Engineering National Tsing Hua University
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