Growth by Liquid-Phase Epitaxy and Characterization of Al_<0.28>Ga_<0.72>As_<0.62>P_<0.38>

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Al_<0.28>Ga_<0.72>As_<0.62>P_<0.38> epitaxial layers were grown on GaAs_<0.61>P_<0.39> substrates by liquid-phase epitaxy using a supercooling technique. The growth conditions and properties of the undoped AlGaAsP layers are described in detail. A fairly shiny surface and a flat AlGaAsP-GaAsP heterointerface was obtained in our study. The lattice mismatch normal to the wafer surface between the Al_<0.28>Ga_<0.72>As_<0.62>P_<0.38> layer and GaAs_<0.68>P_<0.39> substrate is 〜 +0.27%. Low-electron-concentration undoped epitaxial layers can be grown from a Ga solution baked at a temperature of 900℃ for 10 h or more and with a 〜6℃ supersaturation temperature. We obtained the lowest electron concentrations of 1×10^<16> cm^<-3> measured by the capacitance-voltage method. By the photoluminescence measurements at various temperatures and excitation levels, tha four recombination peaks observed are associated with the near-band-to-band, donor-to-valance-band, conduction-band-to-acceptor and donor-to-acceptor-pair transitions. The band gap of the Al_<0.28>Ga_<0.72>As_<0.62>P_<0.38> is ∼2.016 eV (6150 Å). The binding energy of the donor and acceptor is 14 and 36 meV, respectively.
社団法人応用物理学会の論文
1992-08-15