Effects of Substrate Misorientation and Zn Doping Characteristics on the Performance of AlGaInP Visible Light-Emitting Diodes
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-06-15
著者
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Jou M‐j
Industrial Technol. Res. Inst. Hsinchu Twn
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WU Meng-Chyi
Department of Electrical Engineering, National Tsing Hua University
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WU Meng-Chyi
Research Institute of Electrical Engineering, National Tsing Hua University
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WU Meng-Chyi
Institute of Electronics Engineering, National Tsing Hua University
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Wu Meng-chi
Department Of Electrical Engineering National Tsing Hua University
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Wu Ming-yuan
Institute Of Electronics Engineering National Tsing Hua University
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Wu M‐c
National Tsing Hua Univ. Hsinchu Twn
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LIN Jyh-Feng
Research Institute of Electrical Engineering, National Tsing Hua University
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JOU Ming-Jiuun
Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute
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CHANG Chuan-Ming
Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute
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LEE Biing-Jye
Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute
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Wu Meng-chyi
Research Institute Of Electrical Engineering National Tsing Hua University
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Lin Jyh-fengjyh-feng
Research Institute Of Electrical Engineering National Tsing Hua University
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Lee B‐j
Tokyo Inst. Technol. Yokohama Jpn
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Chang Chuan-ming
Opto-electronics & Systems Laboratories Industrial Technology Research Institute
関連論文
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Effect of InGaP Barrier Thickness on the Performance of 1.3-μm InAsP/InP/InGaP Strain-Compensated Multiple-Quantum-Well Laser Diodes : Optics and Quantum Electoronics
- Growth and Characterization of High-Quality InAs_Sb_P_ Alloy by Liquid-Phase Epitaxy
- Thermal Properties of InAs_Sb_P_ Homostructure Diodes
- Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers
- Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes
- Facet-Coating Effects on the 1.3-μm Strained Multiple-Quantum-Well AlGaInAs/InP Laser Diodes
- High-Temperature and Low-Threshold-Current Operation of 1.5 μm AlGaInAs/InP Strain-Compensated Multiple Quantum Well Laser Diodes
- Liquid-Phase Epitaxial Growth of GaInAsSb and the Properties of AlGaSb/GaSb/GaInAsSb Separate Absorption and Multiplication Avalanche Photodiodes
- Low-Concentration GaSb Avalanche Photodiodes Grown by Liquid-Phase Epitaxy Using the Compensation Method
- Effects of Substrate Misorientation and Zn Doping Characteristics on the Performance of AlGaInP Visible Light-Emitting Diodes
- Metalorganic Vapor Phase Epitaxy Growth and Characterization of (Al_xGa_)_In_P/Ga_In_P (x=0.4, 0.7 and 1.0) Quantum Welts on 15°-Off-(100) GaAs Substrates at High Growth Rate
- Photoluminescence Study of Heavily Te-doped GaAs Grown by Liquid-Phase Epitaxy
- Growth and Characterization of In_Ga_As_P_ Layers by Liquid-Phase Epitaxy Using Erbium Gettering
- Growth and Characterization of InGaP Yellow-Green Light-Emitting Diodes by Liquid-Phase Epitaxy
- Donor Gettering of LPE (Liquid-Phase-Epitaxy) InGaAsP Layers in the Presence of Er
- Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal-Oxide-Semiconductor Field-Effect Transistors during Hot-Carrier Stress
- Luminescence of N-Implanted In_Ga_P Grown by Liquid-Phase Epitaxy
- Raman Scattering of InAs_Sb_xP_y Quaternary Alloys
- Liquid-Phase Epitaxial Growth of In_Ga_P on GaP Substrates from Sn-Rich Solutions
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Oxide Confined Collector-Up Heterojunction Bipolar Transistors