Jou M‐j | Industrial Technol. Res. Inst. Hsinchu Twn
スポンサーリンク
概要
関連著者
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Jou M‐j
Industrial Technol. Res. Inst. Hsinchu Twn
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WU Meng-Chyi
Department of Electrical Engineering, National Tsing Hua University
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WU Meng-Chyi
Research Institute of Electrical Engineering, National Tsing Hua University
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WU Meng-Chyi
Institute of Electronics Engineering, National Tsing Hua University
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Wu Meng-chi
Department Of Electrical Engineering National Tsing Hua University
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Wu Ming-yuan
Institute Of Electronics Engineering National Tsing Hua University
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Wu M‐c
National Tsing Hua Univ. Hsinchu Twn
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CHANG Chuan-Ming
Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute
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LEE Biing-Jye
Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute
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Wu Meng-chyi
Research Institute Of Electrical Engineering National Tsing Hua University
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Lin Jyh-fengjyh-feng
Research Institute Of Electrical Engineering National Tsing Hua University
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Lee B‐j
Tokyo Inst. Technol. Yokohama Jpn
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Chang Chuan-ming
Opto-electronics & Systems Laboratories Industrial Technology Research Institute
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Lin Chein-hsin
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University
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Lin C‐h
Department Of Materials Science And Engineering Tsing-hut University
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Jou Ming-jiunn
Opto-electronics & Systems Laboratories Industrial Technology Research Institute
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LIN Chen-Hsi
Winbond Electronics Corp.
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Lin C‐h
Department Of Physics National Cheng Kung University
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LIN Jyh-Feng
Research Institute of Electrical Engineering, National Tsing Hua University
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JOU Ming-Jiuun
Opto-Electronics & Systems Laboratories, Industrial Technology Research Institute
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LIN Jyh-FengJyh-Feng
Research Institute of Electrical Engineering, National Tsing Hut University
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LIN Chun-Hung
Materials Research Laboratories, Industrial Technology Research Institute
著作論文
- Effects of Substrate Misorientation and Zn Doping Characteristics on the Performance of AlGaInP Visible Light-Emitting Diodes
- Metalorganic Vapor Phase Epitaxy Growth and Characterization of (Al_xGa_)_In_P/Ga_In_P (x=0.4, 0.7 and 1.0) Quantum Welts on 15°-Off-(100) GaAs Substrates at High Growth Rate