Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
The first fabrication and current-voltage characteristics of oxide-confined collector-up heterojunction bipolar transistors (HBTs) were reported. A partially oxidized Al0.98Ga0.02As layer was introduced between the base layer and the emitter layer to reduce the base leakage current. The current gain and the turn-on voltage of the fabricated HBT were 16 and 1.07 V, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Chen Shi-ming
Epitech Technology Corporation
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Chen Wen-bin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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CHEN Hong-Ren
Epitech Technology Corporation
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Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Wu Meng-chi
Department Of Electrical Engineering National Tsing Hua University
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Wang Hsin-chuan
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Lin Chun-liang
Department Of Advanced Materials Science Graduate School Of Frontier Science University Of Tokyo
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Wu Meng-Chi
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R. O. C.
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Lin Chun-Liang
Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, Taiwan 70101, R. O. C.
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Chen Shi-Ming
Epitech Technology Corporation, No. 10 Da-Shuen 9th Rd., Tainan Science-Based Industrial Park, Tainan, Taiwan 74145, R. O. C.
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Su Yan-Kuin
Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, Taiwan 70101, R. O. C.
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Wang Hsin-Chuan
Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, Taiwan 70101, R. O. C.
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Su Juh-Yuh
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R. O. C.
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