Direct Growth of $a$-Plane GaN on $r$-Plane Sapphire by Metal Organic Chemical Vapor Deposition
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概要
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In this study, we had demonstrated the direct growth of nonpolar $a$-plane GaN on an $r$-plane sapphire by metal organic chemical vapor deposition (MOCVD) without any buffer layer. First, in this experiment, we had determined the optimum temperature for two-step growth, including obtaining three-dimensional (3D) GaN islands in the nucleation layer and coalescing with a further two-dimensional (2D) growth mode. The result shows that the nucleation layer grown under high temperature (1150 °C) leads to large islands with few grain boundaries. Under the same temperature, the effect of the V/III ratio on the growth of the overlaying GaN layer to obtain a flat and void free $a$-plane GaN layer is also studied. The result indicates one can directly grow a smooth epitaxial layer on an $r$-plane sapphire by changing the V/III ratio. The rms roughness decreases from 13.61 to 2.02 nm. The GaN crystal quality is verified using a mixed acid to etch the film surface. The etch pit density (EPD) is $3.16 \times 10^{7}$ cm-2.
- 2010-04-25
著者
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Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Huang Shyh-Jer
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Yu-Jen Wang
ITRI South Micro Systems Technology Center, Advanced Actuator Systems Department, No. 31, Gongye 2nd Rd., Annan District, Tainan 709, Taiwan
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Hsu Hsiao-Chiu
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, No. 1, Dasyue Rd., East District, Tainan 701, Taiwan
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Chun-Ying Wu
ITRI South Micro Systems Technology Center, Advanced Actuator Systems Department, No. 31, Gongye 2nd Rd., Annan District, Tainan 709, Taiwan
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Ming-Chieh Chou
ITRI South Micro Systems Technology Center, Advanced Actuator Systems Department, No. 31, Gongye 2nd Rd., Annan District, Tainan 709, Taiwan
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