Effects of Trimethylgallium Flow Rate on $a$-Plane GaN Growth on $r$-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth
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概要
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The high crystalline quality of $a$-plane GaN growth on $r$-plane sapphire has been demonstrated successfully by using one-sidewall-seeded epitaxial lateral overgrowth (OSELOG). The dislocation density of OSELOG-grown GaN film is 3--4 orders of magnitude lower than that of the as-grown film and the coalescence thickness of OSELOG-grown GaN is less than 5 μm. Low temperature cathodoluminescence (CL) shows that the optimum trimethylgallium (TMGa) flow rate during OSELOG plays a significant role in enhancing the crystalline quality of $a$-plane GaN. The crystalline quality of $a$-plane GaN can be effectively improved using OSELOG compared with the other ELOG approaches.
- 2011-03-25
著者
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Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Chuang Ricky
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Cheng Chiao-yang
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Huang Shyh-Jer
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Cheng Chiao-Yang
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Chuang Ricky
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Hsu Hsiao-Chiu
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, No. 1, Dasyue Rd., East District, Tainan 701, Taiwan
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Hsu Hsiao-Chiu
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Cheng Shin-Hao
Department of Electrical Engineering, Kun Shan University of Technology, Tainan 710, Taiwan, R.O.C.
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Huang Shyh-Jer
Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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