Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy
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概要
- 論文の詳細を見る
We report the first room-temperature photoreflectance (PR) measurement for self-assemble Ge quantum dot/Si superlattice grown by chemical vapor deposition (CVD) system. The relevant critical energies of transitions are obtained through fitting the PR spectrum. They are in good agreement with the result of theoretical calculations for the wetting layer with strain and a quantum dot of disk shape.
- Japan Society of Applied Physicsの論文
- 2005-09-10
著者
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Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Hwang Jenn-shyong
Department Of Physics National Cheng Kung University
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CHANG Chung-Chih
Department of Physics, National Cheng Kung University
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Lu Yan-ten
Department Of Physics National Cheng Kung University
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Chang Shoou-jinn
Department Of Electrical Engineering National Cheng Kung University
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Lu Yan-Ten
Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Su Yan-Kuin
Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Lee Chie-In
Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Chang Chung-Chih
Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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