Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
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概要
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The work reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with specific design on the electron blocking layer (EBL) by employing the band-engineering. The simulation results show the polarization-induced downward band bending is mitigated in the specific EBL design and, hence, the capability of hole transportation increases and the behavior of electron overflow decreases. The experimental results show the LEDs with specific EBL design exhibited a reduction of forward voltage from 4.40 to 4.07 V and a much enhancement of light output power from 30.6 to 51.9 mW, compared with conventional LED.
- 2013-08-25
著者
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Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
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Chen Jenn-Fang
Electrophysics Department, National Chiao Tung University, Hsinchu 30010, Taiwan, R. O.C.
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Lu Yu-Hsuan
Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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Fu Yi-Keng
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Xuan Rong
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Xuan Rong
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, R.O.C.
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