Separately Doped Structures for Red Organic Light-Emitting Diodes
スポンサーリンク
概要
- 論文の詳細を見る
This paper reports on the separately-doped structures of organic light-emitting diodes (OLED) in which red dye 4-(dicyanomethylene)-2-methyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJT) was doped into the host emitting layer of tris(8-hydroxyquinoline)aluminum (Alq3) by means of ultrathin separate doping (like quantum wells). The parameters in the ultrathin layer, including its width, position, number and spacing between separately doped layers, were changed to study their effects on electroluminescence (EL) characteristics. Thin doped layers increase the luminance efficiency. When the ultrathin separately doped layers were in the vicinity of the NPB/Alq3 interface, where N,N$'$-diphenyl-N,N$'$-bis(1-naphthyl)-(1,1$'$-biphenyl)-4,4$'$-diamine (NPB) is used as a hole transport layer, luminance efficiency also increased. The highest luminance efficiency reaching 4 cd/A was achieved using a double ultrathin separately doped structure with optimum doping thickness and 2 nm of space between the two layers. The study also found that double ultrathin separately doped structures achieved better EL intensity than single or triple ultrathin separately doped structures.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
-
Su Yan-kuin
Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit
-
Yang Chuan-yi
Institute Of Electro-optical And Materials Science National Huwei University Of Science And Technolo
-
LIN David
Windell Corporation
-
Chu Chun-hsun
Electronics Research And Service Organization Industrial Technology Research Institute
-
Chiu Yi-tai
Electronics Research And Service Organization Industrial Technology Research Institute
-
Juang Fuh-shyang
Institute Of Electro-optical And Materials Science National Formosa University
-
Tsai Yu-sheng
Department Of Electro-optics Engineering National Formosa University
-
Tsai Yu-Sheng
Department of Electro-Optics Engineering, National Formosa University, 64 Wunhua Road, Huwei, Yunlin 632 Taiwan
-
Chu Chun-Hsun
Electronics Research and Service Organization, Industrial Technology Research Institute, 30, lane 31, sec 1, Huandung Road, Tainan Science Industrial Park, Tainan, Taiwan
-
Yang Chuan-Yi
Institute of Electro-Optical and Materials Science, National Formosa University
-
Su Yan-Kuin
Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan
-
Chiu Yi-Tai
Electronics Research and Service Organization, Industrial Technology Research Institute, 30, lane 31, sec 1, Huandung Road, Tainan Science Industrial Park, Tainan, Taiwan
-
Juang Fuh-Shyang
Institute of Electo-optical and Materials Science, National Formosa University, 64 Wunhua Road, Huwei, Yunlin 632-08, Taiwan
関連論文
- Photoreflectance Study of InP and GaAs by Metal Organic Chemical Vapor Deposition Using Tertiarybutylphosphine and Tertiarybutylarsine Sources
- Separately Doped Structures for Red Organic Light-Emitting Diodes
- Effects of Doped-Zone Location on the CIE Value of Flexible White Organic Light Emitting Diodes
- Separately Doped Structures for Red Organic Light Emitting Diodes
- Improved Circuit Design of Multipeak Current-Voltage Characteristics Based on Resonant Tunneling Diodes
- AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
- Temperature Dependence of Barrier Height and Energy Bandgap in Au/n-GaSb Schottky Diode
- SiO_2/InP Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor
- AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology
- Transparent barrier coatings for flexible organic light-emitting diode applications
- Top emission organic light emitting diodes with double metal layer anode
- Deep Traps and Mechanism of Brightness Degradation in Mn-doped ZnS Thin-Film Electroluminescent Devices Grown by Metal-Organic Chemical Vapor Deposition
- The Improvement of Luminance Efficiency by the Insertion of Buffer layers in Flexible Organic Light-Emitting Diodes
- Nonspherical LED Packaging Lens for Uniformity Improvement
- Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers
- The annealing effects of GaN MIS capacitors with photo-CVD oxide layers
- Temperature Dependence in In_xGa_As/GaAs Double Quantum Well by Contactless Electroreflectance Spectroscopy
- Stability of Measurement of Heterojunction Bipolar Transistors Current-Voltage Characteristics with Thermal Effect : Semiconductors
- Effects of Trimethylgallium Flow Rate on $a$-Plane GaN Growth on $r$-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth
- Power Efficiency Improvement of White Phosphorescent Organic Light-Emitting Diode with Thin Double-Emitting Layers and Hole-Trapping Mechanism
- AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide : Semiconductors
- Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
- GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
- Enhancement of Luminance Yield of Blue Organic Light-Emitting Diode
- Enhancement of luminance yield of blue light organic light emitting diode
- Practical Issues for Two-Light-Sources Model of Phosphor-Based White Light-Emitting Diode
- Characteristics of Copper Indium Diselenide Thin Films Formed on Flexible Substrates by Electrodeposition
- Top Emission Organic Light-Emitting Diodes with Double-Metal-Layer Anode
- BCl_3/Ar Plasma-Induced Surface Damage in GaInP/InGaAs/GaInP Quantum-Well High-Electron-Mobility Transistors
- Direct Growth of $a$-Plane GaN on $r$-Plane Sapphire by Metal Organic Chemical Vapor Deposition
- Top-Emission Inverted Organic Light Emitting Diode Using Aluminum Nitride as Buffer Layer
- Photoreflectance and C-V Measurement Investigations of Dry Etched Gate Recesses for GaInP/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (HEMTs) Using BCl_3 /Ar Plasma
- The Layout Geometry and Power-Level Dependences of Degradation in Complementary Metal–Oxide–Semiconductor RF Power Cells from Hot-Carrier Stress with Load Pull System
- Comparison of Different Encapsulating Adhesives to Enhance the Efficiencies and Lifetimes of Polymeric Solar Cells
- Improvement in $a$-Plane GaN Crystal Quality by Investigating Different Buffer Layer
- Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes
- Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition
- Improvement in Luminance Efficiency by Insertion of Buffer Layers in Flexible Organic Light-Emitting Diodes
- Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation
- Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
- Efficiency Enhancement of Top Emission Organic Light-Emitting Diodes with Ni/Au Periodic Anode
- Simulation for Double Ultrathin Separately Doped Red Organic Light-Emitting Diode
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Lifetime Improvement of Organic Light Emitting Diodes using LiF Thin Film and UV Glue Encapsulation
- Effects of Thickness of Organic and Multilayer Anode on Luminance Efficiency in Top-Emission Organic Light Emitting Diodes
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- Simulation and Fabrication of InGaP/Al0.98Ga0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Growth of Be-doped p-type GaN under Invariant Polarity Conditions
- Efficient Solution-Processed Green Phosphorescent Organic Light-Emitting Diodes Using Bipolar Host Material
- Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy
- Separately Doped Structures for Red Organic Light-Emitting Diodes
- Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region
- Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer
- Efficient Solution-Processed Green Phosphorescent Organic Light-Emitting Diodes Using Bipolar Host Material (Special Issue : Solid State Devices and Materials)
- Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer (Special Issue : Recent Advances in Nitride Semiconductors)
- Oxide Confined Collector-Up Heterojunction Bipolar Transistors