InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure

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概要

• 論文の詳細を見る

• The light output of InGaN/GaN light-emitting diodes (LEDs) was improved by introducing a current blocking hole between the n-type and p-type bonding pads. The injected current was forced to spread out instead of directly passing along the nearest path between the p-type and n-type bonding pads. The light output of the LED with a current blocking hole at 20 mA was 7.2% higher than that of the conventional LED. The forward voltage of the LED with the blocking hole was 3.29 V at 20 mA, which is slightly higher than that of the conventional LED (3.26 V). LEDs with different current blocking hole sizes were also studied.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2004-04-15

著者

• Chen Shi-ming

  Epitech Technology Corporation

• Chen Wen-bin

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• Su Yan-kuin

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• Wang Hsin-chuan

  Department Of Electrical Engineering And Institute Of Microelectronics National Cheng Kung Universit

• Lin Chun-liang

  Department Of Advanced Materials Science Graduate School Of Frontier Science University Of Tokyo

• Chen Wen-Bin

  Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, Taiwan 70101, R.O.C.

• Lin Chun-Liang

  Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, Taiwan 70101, R.O.C.

• Su Yan-Kuin

  Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, Taiwan 70101, R.O.C.

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