Improvement in the Light Output Power of GaN-Based Light Emitting Diodes by One-Step Current Blocking Design

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概要

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• This paper presented the InGaN/GaN light-emitting diodes (LEDs) using one-step design of indium--tin-oxide (ITO) layer as the current blocking layer (CBL) structure was fabricated successfully and the optoelectronic properties were also measured. The ITO CBL LEDs exhibit higher light output power (16.3% at 20 mA) compared with that of the reference LEDs without CBL. As for the usual current blocking process, the one-step design of ITO CBL as the current blocking structure was demonstrated in our experiment and proved to be an effective, feasible and inexpensive way, with fewer steps and less cost, to improve the LEDs' performance.

• 2011-01-25

著者

• Su Yan-kuin

  Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio

• Lin Chun-liang

  Department Of Advanced Materials Science Graduate School Of Frontier Science University Of Tokyo

• Lin Chun-Liang

  Department of Electronic Engineering, Kun-Shan University, Yung-Kang City, No. 949, Da-Wan Road, Tainan 710, Taiwan, R.O.C.

• Tsai Chun-Fu

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, No. 1 University Road, Tainan 701, Taiwan, R.O.C.

• Su Yan-Kuin

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

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