Size-Dependent Resonant Cavity Light-Emitting Diodes for Collimating Concerns
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概要
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This paper presented the GaN-Based size-dependent ultrathin-film resonant cavity light-emitting diode (uT-RCLED) for highly collimation and light-collective efficiency. The cavity was bound by bottom silver mirror ({\sim}97%) and top distributed Bragg reflector (DBR) with five pairs of SiO2/TiO2 ({\sim}95%). The viewing angle of 50 μm (100 μm) uT-RCLED was near \pm 51° (\pm 47°) through the beam profiler and presented the best light-collective efficiency of 8.18% (9.73%) within \pm 15° light extraction cone contrasted with regular non-DBR ultrathin-film light-emitting diodes (uT-LEDs) (6.57%). In addition, the absolute light output power of the 50 μm (100 μm) uT-RCLED was 95.26% (127.36%) much higher than the uT-LED. Besides, the micromation of RCLED influenced neither the resonant effect nor the collimating properties which opens a potential application for the LED microprojectors to meet the etendue limitation for maximum luminance output.
- 2013-01-25
著者
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Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
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Chao Chia-Hsin
Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.
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Yeh Wen-Yung
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan, R.O.C.
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Chu Ying-Chien
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Su Yan-Kuin
Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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