Lifetime Improvement of Organic Light Emitting Diodes using LiF Thin Film and UV Glue Encapsulation

スポンサーリンク

概要

• 論文の詳細を見る

• This work demonstrates the use of lithium fluoride (LiF) as a passivation layer and a newly developed UV glue for encapsulation on the LiF passivation layer to enhance the stability of organic light-emitting devices (OLEDs). Devices with double protective layers showed a 25-fold increase in operational lifetime compared to those without any packaging layers. LiF has a low melting point and insulating characteristics and it can be adapted as both a protective layer and pre-encapsulation film. The newly developed UV glue has a fast curing time of only 6 s and can be directly spin-coated onto the surface of the LiF passivation layer. The LiF thin film plus spin-coated UV glue is a simple packaging method that reduces the fabrication costs of OLEDs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-07-25

著者

• Tsai Yu-sheng

  Institute Of Electro-optical And Materials Science National Formosa University

• Chen Wen-ray

  Department Of Electronic Engineering National Formosa University

• Huang Bohr-ran

  Graduate School Of Engineering Science And Technology National Yunlin University Of Science And Tech

• Juang Fuh-shyang

  Institute Of Electro-optical And Materials Science National Formosa University

• Hsieh Tsung-eong

  Department Of Materials Science And Engineering National Chiao Tung University

• Su Yan-kuin

  Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio

• Hsieh Tsung-Eong

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Wang Shun-Hsi

  Institute of Electro-optical and Materials Science, National Formosa University, Huwei, Yunlin 632, Taiwan

• Wang Shun-Hsi

  Institute of Electro-optical and Materials Science, National Formosa University, 64 Wunhua Road, Huwei, Yunlin 632-08, Taiwan

• Huang Jian-Ji

  Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

• Chang Ming-Hua

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan

• Hsieh Huai-En

  Graduate School of Optoelectronics Engineering, National Yunlin University of Science and Technology, Yunlin 640, Taiwan

• Liu Mark

  Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 300, Taiwan

• Tsai Yu-Sheng

  Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin 632, Taiwan

• Chang Ming-Hua

  Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Chen Wen-Ray

  Department of Electrical Engineering, Southern Taiwan University of Technology, Tainan 710, Taiwan, R.O.C.

• Huang Bohr-Ran

  Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan

• Chen Wen-Ray

  Department of Electronic Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan

• Juang Fuh-Shyang

  Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin 632, Taiwan

• Hsieh Tsung-Eong

  Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Juang Fuh-Shyang

  Institute of Electo-optical and Materials Science, National Formosa University, 64 Wunhua Road, Huwei, Yunlin 632-08, Taiwan

• Su Yan-Kuin

  Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

関連論文

• High Brightness InGaN/GaN LEDs with ESD Protection
• High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
• Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
• P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
• On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
• Improved Stopband of the Dual-Mode Ring Bandpass Filter Using Periodic Complementary Spilt-Ring Resonators(Microwaves, Millimeter-Waves)
• Spurious Suppression of a Parallel Coupled Microstrip Bandpass Filter with Simple Ring EBG Cells on the Middle Layer(Microwaves, Millimeter-Waves)
• Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors
• Effects of Doped-Zone Location on the CIE Value of Flexible White Organic Light Emitting Diodes
• Separately Doped Structures for Red Organic Light Emitting Diodes
• Low Temperature Metal Induced Crystallization of Amorphous Silicon by Nano-Gold-Particles
• Enhancement of Data Transfer Rate of Phase Change Optical Disk by Doping Nitrogen in Ge-In-Sb-Te Recording Layer
• Transparent barrier coatings for flexible organic light-emitting diode applications
• Moisture-Barrier Properties of Carbon-coated Silicon Oxide Films
• Non-d-wave Behavior Observed in Low-Temperature Specific Heat of Pr_Ce_CuO_
• Heat Treatment Effect on Superconductivity and Specific Heat of Pr1.85Ce0.15CuO4+δ
• Top emission organic light emitting diodes with double metal layer anode
• The Improvement of Luminance Efficiency by the Insertion of Buffer layers in Flexible Organic Light-Emitting Diodes
• Nonspherical LED Packaging Lens for Uniformity Improvement
• Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
• Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
• Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
• ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
• GaInNAs/GaAs p-i-n Photodetector with Multiquantum Well Structure
• Power Efficiency Improvement of White Phosphorescent Organic Light-Emitting Diode with Thin Double-Emitting Layers and Hole-Trapping Mechanism
• Phase-Change Kinetics of Bi--Fe--(N) Layer for High-Speed Write-Once Optical Recording
• Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
• Sintering Behavior, Microstructure, and Dielectric Properties of Nano-Ba0.7Sr0.3TiO3 Ceramics
• Enhancement of Luminance Yield of Blue Organic Light-Emitting Diode
• Enhancement of luminance yield of blue light organic light emitting diode
• Efficiency Improvement of Organic Solar Cells by Slow Growth and Changing Spin-Coating Parameters for Active Layers
• Improvement in the Light Output Power of GaN-Based Light Emitting Diodes by One-Step Current Blocking Design
• Practical Issues for Two-Light-Sources Model of Phosphor-Based White Light-Emitting Diode
• Phase Transition Kinetics and Recording Characteristics of Nanocomposite Layers Prepared by Sputtering Process Utilizing AgInSbTe–SiO2 Composite Target
• The Nanocomposite Thin Film Applied to High-Density Write-Once Optical Data Storage
• Growth, Fabrication, and Characterization of InGaAsN Double Heterojunction Solar Cells
• Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow
• Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors
• Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography
• Bistable Resistive Switching Characteristics of Poly(2-hydroxyethyl methacrylate) Thin Film Memory Devices
• Strain-Compensated GaAsN/InGaAs Superlattice Structure Solar Cells
• Study of Pentacene-Based Organic Thin Film Transistor with PMMA as Insulator
• Electroless Copper/Nickel Films Deposited on AlN Substrates
• Top Emission Organic Light-Emitting Diodes with Double-Metal-Layer Anode
• Top-Emission Inverted Organic Light Emitting Diode Using Aluminum Nitride as Buffer Layer
• Silicon Nanowires as pH Sensor
• Silicon nanowires as a pH sensor
• Color-Tunable Polymer Light-Emitting Diodes with Conjugated Polymer Homojunctions
• Performance Improvement of Flexible Organic Light-Emitting Diodes with Double Hole Transport Layers by Spin-Coating and Evaporation
• Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping
• Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence (Special Issue : Microprocesses and Nanotechnology)
• Effect of Post Annealing on Performance of Polymer Light-Emitting Devices
• Comparison of Different Encapsulating Adhesives to Enhance the Efficiencies and Lifetimes of Polymeric Solar Cells
• GaN-Based Light-Emitting Diodes Grown on Photonic Crystal-Patterned Sapphire Substrates by Nanosphere Lithography
• Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
• InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures
• Investigation of Nonvolatile Memory Effect of Organic Thin-Film Transistors with Triple Dielectric Layers
• Enhancement of Optical Polarization Anisotropy of a-Plane InGaN/GaN Multiple Quantum Well Structure from Violet to Blue-Green Light
• Size-Dependent Resonant Cavity Light-Emitting Diodes for Collimating Concerns
• The Study of Stress Effects in GaN Epilayers on Very Thin Sapphire Substrates Using Chemical Mechanical Polishing Technique
• n-UV+Blue/Green/Red White Light Emitting Diode Lamps
• InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Cu/Pt/Ti Gate and Cu Airbridges
• Optical Disk Mastering Using Optical Superresolution Technique
• Postdeposition Annealing Effect on Redshift Behavior of Electroluminescence for Polymer Light-Emitting Diodes
• Interface Modification in Organic Thin Film Transistors
• Improvement in Luminance Efficiency by Insertion of Buffer Layers in Flexible Organic Light-Emitting Diodes
• High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
• GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes
• Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes
• Efficiency Enhancement of Top Emission Organic Light-Emitting Diodes with Ni/Au Periodic Anode
• Simulation for Double Ultrathin Separately Doped Red Organic Light-Emitting Diode
• Lifetime Improvement of Organic Light Emitting Diodes using LiF Thin Film and UV Glue Encapsulation
• Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
• Enhancing the Overwriting Characteristics of Phase-Change Optical Disks by Doping in Dielectric Layers
• Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
• Non-$d$-wave Behavior Observed in Low-Temperature Specific Heat of Pr1.85Ce0.15CuO4.065
• InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
• Effects of Thickness of Organic and Multilayer Anode on Luminance Efficiency in Top-Emission Organic Light Emitting Diodes
• AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
• Superresolution Structure Optical Disk with Semiconductor-Doped Glass Mask Layer Containing CdSe Nanoparticles
• Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions
• Efficient Solution-Processed Green Phosphorescent Organic Light-Emitting Diodes Using Bipolar Host Material
• Radio-Frequency Inductors on High-Resistivity Silicon Substrates with a Nanocrystalline Silicon Passivation Layer
• Separately Doped Structures for Red Organic Light-Emitting Diodes
• High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
• InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
• GaInNAs p–i–n Photodetectors with Multiquantum Wells Structure
• Heat Treatment Effect on Superconductivity and Specific Heat of Pr1.85Ce0.15CuO4+δ
• Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes
• Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO
• GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer
• Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO₂ Nanoparticles in Specific Region of Encapsulation Silicone (Special Issue : Recent Advances in Nitride Semiconductors)
• Efficient Solution-Processed Green Phosphorescent Organic Light-Emitting Diodes Using Bipolar Host Material (Special Issue : Solid State Devices and Materials)
• High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

もっと見る 閉じる

スポンサーリンク