Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence (Special Issue : Microprocesses and Nanotechnology)
スポンサーリンク
概要
著者
-
Chou Wu-ching
Department Of Electrophysics National Chiao Tung University
-
Chen Yung-feng
Institute Of Microelectronics And Advanced Optoelectronic Technology Center National Cheng Kung Univ
-
Lee Ling
Department Of Electrophysics National Chiao Tung University
-
Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
-
Ko Chih-Hsin
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, Taiwan, R.O.C.
-
Chien Kun-Feng
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
-
Fan Wen-Chung
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
-
Wu Cheng-Hsien
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu 300, Taiwan, Republic of China
-
Lin You-Ru
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu 300, Taiwan, Republic of China
-
Wan Cheng-Tien
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu 300, Taiwan, Republic of China
-
Wann Clement
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu 300, Taiwan, Republic of China
-
Hsu Chao-Wei
Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan, Republic of China
関連論文
- High Brightness InGaN/GaN LEDs with ESD Protection
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- Improved Stopband of the Dual-Mode Ring Bandpass Filter Using Periodic Complementary Spilt-Ring Resonators(Microwaves, Millimeter-Waves)
- Spurious Suppression of a Parallel Coupled Microstrip Bandpass Filter with Simple Ring EBG Cells on the Middle Layer(Microwaves, Millimeter-Waves)
- Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors
- Formation of Self-organized GaN Dots on Al_Ga_N by Alternating Supply of Source Precursors
- Low Temperature Metal Induced Crystallization of Amorphous Silicon by Nano-Gold-Particles
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
- Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
- Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- GaInNAs/GaAs p-i-n Photodetector with Multiquantum Well Structure
- Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
- Improvement in the Light Output Power of GaN-Based Light Emitting Diodes by One-Step Current Blocking Design
- Growth, Fabrication, and Characterization of InGaAsN Double Heterojunction Solar Cells
- Performance Improvement of InGaAsN/GaAs Quantum Well Lasers by Using Trimethylantimony Preflow
- Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors
- Effect of Strain on Static and Dynamic NBTI of pMOSFETs
- Carrier Relaxation of ZnCdSe/ZnSe Quantum Wells
- Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography
- Bistable Resistive Switching Characteristics of Poly(2-hydroxyethyl methacrylate) Thin Film Memory Devices
- Strain-Compensated GaAsN/InGaAs Superlattice Structure Solar Cells
- Study of Pentacene-Based Organic Thin Film Transistor with PMMA as Insulator
- Chronic orchialgia : Consider gabapentin or nortriptyline before considering surgery
- Current Properties of GaN V-Defect Using Conductive Atomic Force Microscopy
- Color-Tunable Polymer Light-Emitting Diodes with Conjugated Polymer Homojunctions
- Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping
- Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence (Special Issue : Microprocesses and Nanotechnology)
- Effect of Post Annealing on Performance of Polymer Light-Emitting Devices
- GaN-Based Light-Emitting Diodes Grown on Photonic Crystal-Patterned Sapphire Substrates by Nanosphere Lithography
- Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
- Effects of Substrate Temperature on the Properties of Alq3 Amorphous Layers Prepared by Vacuum Deposition
- InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures
- Investigation of Nonvolatile Memory Effect of Organic Thin-Film Transistors with Triple Dielectric Layers
- Enhancement of Optical Polarization Anisotropy of a-Plane InGaN/GaN Multiple Quantum Well Structure from Violet to Blue-Green Light
- Size-Dependent Resonant Cavity Light-Emitting Diodes for Collimating Concerns
- The Study of Stress Effects in GaN Epilayers on Very Thin Sapphire Substrates Using Chemical Mechanical Polishing Technique
- n-UV+Blue/Green/Red White Light Emitting Diode Lamps
- Postdeposition Annealing Effect on Redshift Behavior of Electroluminescence for Polymer Light-Emitting Diodes
- Hot Carrier Cooling Study of ZnCdSe Epilayers
- Fabrication and Physical Properties of Radio Frequency Sputtered ZnMnSe Thin Films
- Interface Modification in Organic Thin Film Transistors
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
- GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes
- Efficiency Enhancement of Top Emission Organic Light-Emitting Diodes with Ni/Au Periodic Anode
- Lifetime Improvement of Organic Light Emitting Diodes using LiF Thin Film and UV Glue Encapsulation
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- Optical Properties of Zn1-xCdxSe Epilayers Grown on (100) GaAs b y Molecular Beam Epitaxy
- Optical Properties of Uncapped InN Nanodots Grown at Various Temperatures
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions
- Characterizing the Channel Backscattering Behavior in Nanoscale Strained Complementary Metal Oxide Semiconductor Field-Effect Transistors
- Radio-Frequency Inductors on High-Resistivity Silicon Substrates with a Nanocrystalline Silicon Passivation Layer
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
- GaInNAs p–i–n Photodetectors with Multiquantum Wells Structure
- Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes
- Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO
- GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer
- Enhancement of Light Extraction Efficiency in GaN-Based Blue Light-Emitting Diodes by Doping TiO₂ Nanoparticles in Specific Region of Encapsulation Silicone (Special Issue : Recent Advances in Nitride Semiconductors)
- High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes