Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes

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概要

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• The effect of selective Si doping on the emission efficiency in ultraviolet (UV) light-emitting diodes (LEDs) is investigated both experimentally and theoretically. The results show that the light output power increases with the number of Si-doped barriers (QBs). Experimental results indicate that compared with an all-undoped-QB LED, a factor of 3.17 can be achieved for the output power of an all-doped-QB LED at 350 mA. Detailed analysis on this phenomenon shows that the Si-doped QB is beneficial to suppress the nonradiative recombination rate by excess electrons in doped barriers.

• 2013-08-25

著者

• Chen Ying-chih

  Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit

• Su Yan-kuin

  Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio

• Huang Shyh-Jer

  Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

• Su Yan-Kuin

  Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

• Chen Ying-Chih

  Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

• Fu Yi-Keng

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan

• Xuan Rong

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan

• Xuan Rong

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.

• Lu Yu-Hsuan

  Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

• Pilkuhn Manfred

  Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

• Fu Yi-Keng

  Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan, R.O.C.

• Huang Shyh-Jer

  Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

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