GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes
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概要
- 論文の詳細を見る
Indium-tin-oxide (ITO) layers were deposited onto n-GaN films by DC magnetron sputtering and GaN metal-semiconductor-metal (MSM) photodetectors were fabricated. The Schottky barrier height of ITO on n-GaN was determined to be approximaately 0.80 eV. The ITO contacts on n-GaN have lower dark currents compared with other metals, Au, Pd and Ni. It was also found that we could achieve a photocurrent-to-dark-current contrast higher than two orders of magnitude by applying only a 2 V reverse bias. We also found that the maximum photoresponsivity at 350 nm was 0.12 A/W under a 5 V reverse bias. This value corresponds to an external quantum efficiency of 34.6%.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
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Chen Min-Hong
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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Juang Fhu-Shyang
Department of Electro-Optics Engineering, National Huwei Institute of Technology, Huwei, Yunlin 632-08 Taiwan
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Su Yan-Kuin
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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