Radio-Frequency Inductors on High-Resistivity Silicon Substrates with a Nanocrystalline Silicon Passivation Layer
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概要
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In this paper, spiral inductors on high-resistivity silicon (HR-Si) substrates, which surfaces were passivated by different process methods, were fabricated and measured. The comparison of inductances and quality factors between these inductors shows that the inductances and quality factors of spiral inductors significantly depend on process method and thickness of surface passivation layer. The differently generated passivation layer results in different effective substrate resistivity and hence gives rise to different substrate loss. The experimental results show that using thicker nanocrystalline silicon (nc-Si) as a passivation layer will result in a smaller substrate loss and hence spiral inductors on the substrate have larger inductances and larger quality factors. In this study, the metal thickness of inductors is 1.2 μm and is about half that of the inductors provided by foundries. At higher frequencies, the thinner spiral inductors on the SiO<inf>2</inf>/nc-Si/HR-Si substrate have larger inductances and larger quality factors as compared with the inductors provided by foundries. With the same metal thickness as that adopted in standard processes of foundries, the identical-geometry inductors on the SiO<inf>2</inf>/nc-Si/HR-Si substrate probably exhibit superior quality factors.
- 2013-04-25
著者
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WANG Ruey-Lue
Department of Electrical Engineering, National Cheng Kung University
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Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
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Hsueh Ting-Jen
National Nano Device Laboratories, Tainan 741, Taiwan
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Lin Yu-Ru
Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan
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Chen Chao-Jung
Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
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Liu Pin-Yi
Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan
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Hsueh Ting-Jen
National Nano Device Labs, National Applied Research Laboratories, Tainan 701, Taiwan
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Wang Ruey-Lue
Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan
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Su Yan-Kuin
Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan
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