Enhancement of Optical Polarization Anisotropy of a-Plane InGaN/GaN Multiple Quantum Well Structure from Violet to Blue-Green Light
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概要
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A nonpolar a-plane (11\bar{2}0) InGaN/GaN epitaxial layer was grown on r-plane (10\bar{1}2) sapphire substrates by metal--organic chemical vapor deposition (MOCVD). In this work, a set of step-stage multiple quantum wells (MQWs) is inserted between underlying GaN and overlying high indium-content MQWs to investigate its influence on the optical properties of the active region. The step-stage MQWs were deposited by varying growth temperature at fixed precursor flow rate. Optical properties were investigated by the measurement of temperature-dependent photoluminescence (TD-PL). The optical polarization ratio, activation energy, and the smile-like curve in full width at half maximum (FWHM) of PL were analyzed in detail.
- 2013-01-25
著者
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Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
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Hsu Hsiao-Chiu
Advanced Optoelectronic Technology Center, Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, No. 1 Dasyue Rd., East District, Tainan 701, Taiwan, R.O.C.
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Huang Shyh-Jer
Advanced Optoelectronic Technology Center, Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, No. 1 Dasyue Rd., East District, Tainan 701, Taiwan, R.O.C.
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Su Sheng-Han
Institute of Nanotechnology and Microsystem Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Hsu Hsiao-Chiu
Advanced Optoelectronic Technology Center, Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Huang Shyh-Jer
Advanced Optoelectronic Technology Center, Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Su Yan-Kuin
Institute of Nanotechnology and Microsystem Engineering, National Cheng Kung University, Tainan 701, Taiwan
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