Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by a Strain Relief Layer and Proper Si Doping
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概要
- 論文の詳細を見る
The effects of a strain relief layer (SRL) employed in the InGaN/GaN light-emitting diodes (LEDs) was demonstrated. The wavelength shift was reduced to as small as 2.5 nm by inserting a SRL between n-GaN and InGaN/GaN multiple quantum wells (MQWs). For the improvement of optical properties, a proper Si-doped layer was simultaneously added in the last several barriers of In0.08Ga0.92N/GaN SRL. It can be found that the output power was increased more than 25% as the Si doping level was increased up to 5 times in the last three barriers of SRL at an injection current of 20 mA. Furthermore, the forward voltages at 20 mA were almost the same for all LEDs with different doping levels and positions.
- 2010-04-25
著者
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Chen Wen-ray
Department Of Electronic Engineering National Formosa University
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Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
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Chun-Yuan Huang
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Wen-Ray Chen
Department of Electrical Engineering, National Formosa University, Yunlin 632, Taiwan, Republic of China
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Tsai Ping-Chieh
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Ping-Chieh Tsai
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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Chen Wen-Ray
Department of Electrical Engineering, Southern Taiwan University of Technology, Tainan 710, Taiwan, R.O.C.
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Yan-Kuin Su
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China
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