InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts

概要

論文の詳細を見る
Ni (5 nm)/Au (5 nm) and Ni (5 nm)/indium-tin-oxide (ITO) (60 nm) films were deposited onto glass substrates, p-GaN epitaxial layers and nitride-based light-emitting diode (LED) structures. It was found that the normalized transmittance of subjected to rapid thermal annealing at 300°C Ni/ITO film (300°C-RTA) could reach 90.1% at 460 nm, which was much larger than that of the Ni/Au film. It was also found that the specific contact resistances were $5.0\times 10^{-4}$ $\Omega$cm2, $1.3\times 10^{-3}$ $\Omega$cm2 and $7.2\times 10^{-4}$ $\Omega$cm2 for the Ni/Au, Ni/ITO and 300°C-RTA Ni/ITO contacts on p-GaN, respectively. Nitride-based LEDs with these p-contact layers were also fabricated. It was found that the LED with the 300°C-RTA Ni/ITO p-contact has a reasonably small operation voltage (i.e., 3.29 V at 20 mA). The 20 mA output intensity of the LED with the 300°C-RTA Ni/ITO p-contact is also 65% larger than that of the LED with the Ni/Au p-contact.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-06-15