Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
The use of low-frequency ($1/f$) noise to evaluate low-cost stress-memorization technique (SMT) induced-stress in n-type metal--oxide--semiconductor field-effect transistors has been investigated. As compared to device without SMT process, the comparable $1/f$ noise level obtained for strained Si devices with the low-cost SMT process indicates that adding the low-cost SMT process will not affect the Si/SiO2 interface quality. Moreover, through observing experiment result and Hooge's parameter $\alpha_{\text{H}}$, the mechanism of $1/f$ noise in the both devices can be properly interpreted by the carrier number fluctuations correlated mobility fluctuations (unified model).
- 2011-04-25
著者
-
Wu San-lein
Department Of Electronic Engineering Cheng Shiu University
-
Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
-
CHENG Yao-Chin
United Microelectronics Corp.
-
Cheng Osbert
United Microelectronics Corp. (umc) Crd Logic Division
-
Lin Hau-Yu
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
-
Kuo Cheng-Wen
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
-
Huang Yao-Tsung
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
-
Hong De-Gong
Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan, R.O.C.
-
Wu Chung-Yi
Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan
-
Hong De-Gong
Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan
-
Cheng Osbert
United Microelectronics Corporation, Ltd., Tainan Science-Based Industrial Park, Tainan 74145, Taiwan
-
Cheng Yao-Chin
United Microelectronics Corporation, Ltd., Tainan Science-Based Industrial Park, Tainan 74145, Taiwan
-
Wu San-Lein
Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan
-
Wu Chung-Yi
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan
関連論文
- Two-Step Etching Mechanism of Ag-Si Nanostructure with Various Ag Nanoshape Depositions
- High Brightness InGaN/GaN LEDs with ESD Protection
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
- NBTI Improvement under Highly Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS and Beyond
- 56% pMOSFETs Drive Current Enhancement from Optimized Compressive Contact Etching Stop Layer (CESL) for 45nm Node CMOS
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
- Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
- Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- Investigation of Impact Ionization in Strained-Si nMOSFETs
- Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
- Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- A Decoupled Capacitance Measurement Technique for Characterization of Small-Geometry MOSFETs with Ultra-Thin Gate Oxides
- Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
- Effect of STI Stress Enhanced Boron Diffusion on Leakage and Vcc min of Sub-65nm node Low-Power SRAM
- A Novel Fabrication of p--n Diode Based on ZnO Nanowire/p-NiO Heterojunction
- Crystal Polarity Effects on Magnesium Implantation into GaN Layer
- Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN
- ZnO Nanowire-Based CO Sensors Prepared at Various Temperatures
- Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film
- AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
- The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads
- Analysis of Electron Tunneling Components in p+ Poly-Gate p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors from Direct Tunneling Region to Fowler–Nordheim Region
- Efficiency Droop Characteristics in InGaN-Based Near Ultraviolet-to-Blue Light-Emitting Diodes
- New Negative-Bias-Temperature-Instability Improvement Using Buffer Layer under Highly Compressive Contact Etch Stop Layer for 45-nm-Node Complementary Metal–Oxide–Semiconductor and Beyond
- Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
- InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures
- Microstructural Characteristics of InGaZnO Thin Film : Using an Electrical Current Method
- GaN Schottky Barrier Photodetectors with a \beta-Ga2O3 Cap Layer
- AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
- n-UV+Blue/Green/Red White Light Emitting Diode Lamps
- Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- Effect of Substrate Properties on Luminescence of White ZnGa2O4 Phosphor
- Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions
- High-Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition
- Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
- Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
- Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
- GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer
- GaN Schottky Barrier Photodetectors with a β-Ga_2O_3 Cap Layer
- Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
- Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)
- High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
- Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates
- Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise