Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-02-14

著者

• Wu San-lein

  Department Of Electronic Engineering Cheng Shiu University

関連論文

• Investigation of Impact Ionization in Strained-Si nMOSFETs
• Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
• Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
• Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Analysis of Electron Tunneling Components in p+ Poly-Gate p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors from Direct Tunneling Region to Fowler–Nordheim Region
• GaN Schottky Barrier Photodetectors with a \beta-Ga2O3 Cap Layer
• Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
• Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
• Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
• GaN Schottky Barrier Photodetectors with a β-Ga_2O_3 Cap Layer
• Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
• Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)
• Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise

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